Rubrene: MoO3 mixed thin film-based infrared detector

A thin film and glass substrate technology is applied in the field of infrared detector preparation to achieve the effect of enriching preparation materials

Inactive Publication Date: 2019-07-19
BEIJING UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Rubrene:MoO3 charge-transfer complexes show special properties such as near-infrared absorption, and infrared photodetectors prepared using this property have not been reported yet

Method used

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  • Rubrene: MoO3 mixed thin film-based infrared detector
  • Rubrene: MoO3 mixed thin film-based infrared detector
  • Rubrene: MoO3 mixed thin film-based infrared detector

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Experimental program
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Embodiment Construction

[0016] (a)

[0017] (1) Using a glass substrate as a substrate, the substrate was ultrasonically cleaned in toluene, acetone, ethanol solution and deionized water for 15 minutes, and then cleaned with N in a glove box. 2 Dry and set aside.

[0018] (2) Using a high-vacuum organic-metal composite evaporation system, at 5×10 -4 Heating Rubrene and MoO under high vacuum environment in Pa 3 powder, prepared Rubrene:MoO 3 (mass ratio of 1:1) mixed film, and vacuum in-situ annealing; for comparison, Rubrene and MoO were prepared under the same environment 3 The intrinsic film, which has the same thickness as the hybrid film, is 200 nm.

[0019] (3) Tested Rubrene:MoO 3 Optical properties of hybrid films.

[0020] (b)

[0021] (1) Using a glass substrate as a substrate, the substrate was ultrasonically cleaned in toluene, acetone, ethanol solution and deionized water for 15 minutes, and then cleaned with N in a glove box. 2 Dry and set aside.

[0022] (2) Using a high-vacuum...

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Abstract

The invention relates to preparation method of a Rubrene: MoO3 mixed thin film-based infrared detector. The method mainly comprises the following steps of carrying out substrate cleaning, thin film preparation, thin film testing, detector preparation and detector performance test. Firstly, ultrasonic cleaning is carried out in methylbenzene, acetone, ethanol and deionized water for 15 minutes separately; then the temperature of an evaporation source is controlled in a high vacuum organic-composite evaporation system to further control the evaporation rate to prepare a mixed thin film at the mass ratio of 1 to 1, and next, test is carried out on the optical property and the electrical property of the thin film. Tests show that the interaction of the two materials is very strong, an intermediate energy level is induced in the interaction process to form a charge transfer complex, and the corresponding energy, namely a near-infrared wave band, is subjected to optical absorption. Finally,an infrared detector based on the mixed thin film is prepared, the current-voltage characteristic of the detector is tested, and the test proves that the Rubrene: MoO3 mixed thin film-based infrared detector shows relatively high optical current turn-off ratio.

Description

technical field [0001] The invention relates to a preparation method of an infrared detector, which belongs to the field of preparation of functional devices. Background technique [0002] Organic semiconductor materials have the advantages of low cost, easy large-area processing, integration with flexible substrates, lightness and environmental protection, and are widely used in organic solar cells, organic light-emitting diodes, organic field effect transistors, organic detectors and other fields. Organic small molecule materials have simple processing technology and good repeatability, so they have become a research hotspot. Common organic small molecule semiconductors (rubrene, pentacene, etc.) generally have large band gaps, which limits their applications in the infrared and near-infrared bands. Therefore, improving the carrier concentration and mobility of organic semiconductors and preparing narrow-bandgap organic semiconductors has become a research challenge. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/164H10K85/622H10K30/30H10K2102/00Y02E10/549
Inventor 邓金祥李瑞东陈亮
Owner BEIJING UNIV OF TECH
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