Solution processing-based uniform discrete type fluff sphere-like rubrene crystal growth method

A technology of solution processing and rubrene, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., to achieve the effect of simple operation, effective experimental means, and low film forming temperature

Inactive Publication Date: 2017-06-23
CHANGCHUN UNIV OF TECH
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention is a method for growing uniform and discrete pompom-shaped rubrene crystals based on solution processing, the purpose of which is to overcome the problems of solution method high temperature heating or steam annealing film formation, etc., improve the film-forming property of rubrene, and improve device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solution processing-based uniform discrete type fluff sphere-like rubrene crystal growth method
  • Solution processing-based uniform discrete type fluff sphere-like rubrene crystal growth method
  • Solution processing-based uniform discrete type fluff sphere-like rubrene crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The present invention will be further described below in conjunction with the examples, but the present invention is not limited.

[0012] First prepare a 4.8 mg / ml rubrene solution (2) with tetrahydrofuran as a solvent and a 5 mg / ml polystyrene (PS) solution (1) with chloroform as a solvent, and ultrasonicate the prepared solution for 15 min to promote The solute is completely dissolved. Add 0.3 ml of high boiling point solvent N,N-dimethylformamide (DMF) dropwise to the sonicated rubrene solution. Then configure the piranha solution, the composition of the piranha solution is concentrated sulfuric acid with a volume ratio of 70:30: 30% hydrogen peroxide, and Si / SiO 2 The substrate (3) was soaked in piranha solution heated at 90 °C in a water bath for 25 minutes to carry out hydrophilic treatment of the substrate. After taking out the substrate, it was washed with acetone, ethanol, and deionized water respectively, and dried with nitrogen before being placed on the su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a solution processing-based uniform discrete type fluff sphere-like rubrene crystal growth method, namely rubrene is induced through adopting a solution processing and film forming method by utilizing polymer monolayer to be crystalized into uniform discrete type fluff sphere-like rubrene crystal. the method comprises the following steps: firstly, dispensing a polymer solution (1) on a cleanly treated Si/SiO2 substrate (3), and performing low-temperature annealing under air environment, to form an annealed and cured polymer induction layer (6); then dispensing rubrene solution (2) on the annealed and cured polymer induction layer (6), performing low-temperature annealing treatment to a primarily formed rubrene thin film, and curing to form a film, leading the rubrene crystal to be sequentially grown into uniform discrete type fluff sphere-like rubrene crystal (13) under the induction action of the tetrahydrofuran (8)/DMF (9) double-solvent regulation and polymer induction layer. The method has important research significance and practical values on the improvement of crystal appearance and device performance of rubrene.

Description

technical field [0001] The invention mainly relates to a method for growing uniform and discrete fluffy rubrene crystals based on solution processing, and belongs to the technical field of organic optoelectronics. Background technique [0002] Thin-film transistors based on organic semiconductors have attracted extensive attention in recent years because of their great potential in realizing low-cost, large-area, and industrially mass-produced flexible electronic devices. Rubrene is a typical p-type organic small molecule semiconductor material. Due to its good semiconductor properties and fluorescent properties, rubrene is widely used in organic thin film transistors, organic light-emitting diodes and organic solar cells, and has become one of the hot research topics. one. A large number of studies have shown that device performance is closely related to the crystalline structure of thin films. In order to produce large-area and high-quality organic crystalline thin films,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06
CPCC09K11/06C09K2211/14
Inventor 王丽娟张沛沛张梁范思大朱阳阳尹丽孙丽晶李占国
Owner CHANGCHUN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap