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A method for regulating the growth of spherical rubrene crystal thin films by co-solvent of polymer-induced layer

A rubrene and polymer technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of poor film formation and difficult crystallization, and achieve good film formation, low cost and high load. The effect of carrier mobility

Active Publication Date: 2017-08-08
CHANGCHUN UNIV OF TECH
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Problems solved by technology

[0004] The present invention is a method for controlling the growth of a spherical rubrene crystal thin film by a co-solvent of a polymer induction layer. Technology to prepare large-area and uniform rubrene crystal thin films

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  • A method for regulating the growth of spherical rubrene crystal thin films by co-solvent of polymer-induced layer
  • A method for regulating the growth of spherical rubrene crystal thin films by co-solvent of polymer-induced layer

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Embodiment Construction

[0009] Such as figure 1 As shown, the Si / SiO 2 Substrate Substrate (1) Soak in piranha solution heated at 90°C in a water bath for 25 minutes for substrate treatment. Rinse once, blow dry with nitrogen, and dry in an oven. Treated Si / SiO 2 The substrate substrate (1) is placed on the glue homogenizer, and the PS solution (2) of chloroform solvent is uniformly dripped on the substrate, and the forward rotation is 400rpm, and the rear rotation is 1250rpm. Coat the PS film to form a layer of PS film (3) with a uniform and directional arrangement on the substrate modification layer; then apply the rubrene solution (4) in chloroform solvent evenly on the PS film, and in the chloroform solvent (5) During the volatilization process, the control-induced layer PS film (3) arranged more orderly (2), and rubrene crystals also began to gather and grow orderly (6); then, the film was cured and dried for 10 min in an 80°C drying oven. Using the properties of the co-solvent, the microsco...

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Abstract

The present invention designs a method for regulating the growth of spherical rubrene crystals by the co-solvent of the polymer induction layer, that is, the method of regulating the orderly growth of rubrene molecules into spherical crystals through the induction layer of polystyrene (PS) under the co-solvent of chloroform . By spin-coating the polymer-induced layer (2) of chloroform solvent, a layer of substrate modification layer film (3) with uniform and directional arrangement is formed, and then the rubrene semiconductor layer (4) of chloroform solvent is drip-coated, using a co-solvent The microscopic arrangement of polymer molecules induces the growth of highly ordered arrangement of rubrene crystals, forming dense spherical rubrene crystals (9). The invention has simple operation and low cost, can obtain large-area, continuous and uniform rubrene spherical crystals, and lays a foundation for the growth of organic semiconductor thin film crystals with high mobility.

Description

technical field [0001] The invention mainly relates to a method for regulating and controlling the growth of a spherical rubrene crystal film by a co-solvent of a polymer induction layer, and belongs to the technical field of organic optoelectronics. Background technique [0002] Organic small molecule films can be applied to organic thin film transistors, large-scale integrated circuits, sensors, organic lasers, etc., and have broad application prospects and have attracted widespread attention. Small organic molecules can be formed into films using vacuum deposition techniques and solution processing techniques. Vacuum deposition technology forms a film, although the uniformity is good and the thickness is controllable, but the equipment is complicated, the cost is high, and the process is complicated. The film-forming method of solution processing technology has simple equipment, low experimental temperature and low cost, and has a good prospect in the field of flexible d...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/40
CPCH10K71/12
Inventor 王丽娟张沛沛张梁耿阳博沈钰王艺霖范思大李占国
Owner CHANGCHUN UNIV OF TECH
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