Directionally recrystallized graphene growth substrates

Abstract

Implementations and techniques for producing substrates suitable for growing graphene monolayers are generally disclosed.

Description

Background technique [0001] Unless otherwise indicated, the materials described in this section are not prior art to the claims in this application and are not admitted to be prior art by inclusion in this section. [0002] Graphene, typically a planar single-layer array of carbon atoms, can be grown using chemical vapor deposition (CVD) on a substrate surface coated with a layer of nickel (Ni), ruthenium (Ru), or copper (Cu). However, defects in graphene production, such as nucleation of multilayer graphene, may occur at metal grain boundaries in the growing layers of the graphene substrate. Controlling the morphology of the growth layer by limiting the number of metal grain boundaries can improve the morphology of the graphene film, which in turn can improve the occurrence of production defects such as multilayer graphene. [0003] Directional crystallization (also known as excimer laser annealing) has been used to control the morphology of silicon (Si) layers in active mat...

AI Technical Summary

Problems solved by technology

However, defects in graphene production, such as nucleation of multilayer graphene, can occur at metal grain boundaries in the growing layers of the graphene substrate

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