Method for rapidly and nondestructively transferring graphene

A graphene, fast technology, applied in the field of fast and non-destructive transfer of graphene, can solve the problems of graphene structure damage, time-consuming, environmental pollution, etc., achieve the effect of good monolayer and uniformity, and avoid organic glue residues

Active Publication Date: 2013-09-11
CHONGQING GRAPHENE TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing transfer methods are to corrode the metal substrate. This process not only consumes a lot of time, but also causes slight damage to the graphene structure, residual substrate metal, and environmental pollution. These factors will significantly increase the cost of graphene preparation.

Method used

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  • Method for rapidly and nondestructively transferring graphene
  • Method for rapidly and nondestructively transferring graphene
  • Method for rapidly and nondestructively transferring graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The graphene transferred in this embodiment is grown on the copper foil growth substrate by CVD method, the growth temperature is 1000° C., the pressure is low pressure, the protective gas and carbon source are respectively nitrogen and methane, and the growth time is 30 minutes.

[0025] like figure 1 Shown, the method for the rapid lossless transfer graphene of the present embodiment, comprises the following steps:

[0026] 1) Select polystyrene as the target substrate, first perform plasma etching on the surface of the target substrate, generate oxygen-containing functional groups on the surface of the target substrate, these groups can promote adhesion, and then coat the surface of the target substrate with thermosetting epoxy resin;

[0027] 2) Paste the surface of the target substrate coated with thermosetting epoxy resin obtained in step 1) on graphene to form a composite structure of target substrate / graphene / growth substrate;

[0028] 3) Carry out hot pressin...

Embodiment 2

[0031] The graphene transferred in this embodiment is grown on the copper foil growth substrate by CVD method, the growth temperature is 800° C., the pressure is low pressure, the protective gas and carbon source are respectively nitrogen and ethylene, and the growth time is 50 min.

[0032] like figure 2 Shown, the method for the rapid lossless transfer graphene of the present embodiment, comprises the following steps:

[0033] 1) Choose polyethylene terephthalate as the target substrate, first pickle and alkali wash the surface of the target substrate, generate oxygen-containing functional groups on the surface of the target substrate, these groups can promote adhesion, and then Coating light-curable polyacrylate on the target substrate surface;

[0034] 2) Paste the surface of the target substrate coated with photocurable polyacrylate obtained in step 1) on graphene to form a composite structure of target substrate / graphene / growth substrate;

[0035] 3) Perform ultraviol...

Embodiment 3

[0038] The graphene transferred in this embodiment is grown on the nickel foil growth substrate by CVD method, the growth temperature is 600° C., the pressure is low pressure, the protective gas and carbon source are respectively nitrogen and acetylene, and the growth time is 40 min.

[0039] like figure 1 Shown, the method for the rapid lossless transfer graphene of the present embodiment, comprises the following steps:

[0040] 1) Select polymethyl methacrylate as the target substrate, first treat the surface of the target substrate with ozone, and generate oxygen-containing functional groups on the surface of the target substrate. These groups can promote adhesion, and then coat the surface of the target substrate Thermosetting unsaturated polyester;

[0041] 2) Paste the surface of the target substrate coated with thermosetting unsaturated polyester obtained in step 1) on graphene to form a composite structure of target substrate / graphene / growth substrate;

[0042] 3) Th...

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Abstract

The invention discloses a method for rapidly and nondestructively transferring graphene. The method comprises the following steps of: (1) coating a thermosetting adhesive or an optical curing adhesive on the surface of a target substrate; (2) attaching the surface of the target substrate, which is obtained in the step (1) and is coated with the thermosetting adhesive or the optical curing adhesive, to the graphene, thus forming a target substrate/graphene/growth substrate composite structure; (3) performing hot-press treatment or UV-irradiation curing treatment on the target substrate/graphene/growth substrate composite structure obtained in the step (2); (4) performing growth substrate stripping on the target substrate/graphene/growth substrate composite structure treated in the step (3). The large-area high-quality graphene can be transferred to the target substrate under the condition that the growth substrate is not corroded, the obtained graphene has a high single-layer property and relatively high uniformity, the pollution of organic adhesive residues and metal substrate dissolution on the graphene in the transfer process is avoided, and the growth substrate can be repeatedly used and is economic and environment-friendly.

Description

technical field [0001] The invention relates to a graphene transfer method, in particular to a fast and non-destructive transfer graphene method. Background technique [0002] Graphene is the only two-dimensional free-state atomic crystal discovered so far, and it is the sp 2 The basic structural unit of hybrid carbon has many excellent electronic and mechanical properties, so it has attracted great attention from scientists in other fields such as chemistry and materials. Graphene has potential applications in nanoelectronic devices, energy storage materials, and optoelectronic materials due to its special electrical, thermal, and mechanical properties. [0003] The existing process is mature and the method to achieve large-scale preparation of graphene is chemical vapor deposition (CVD). The CVD method generally uses metals as growth substrates, such as copper foil, nickel foil, iron foil, aluminum foil, and alloys, to prepare graphene. To make graphene a real breakthro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 张永娜黄德萍汤林龙李朝龙李占成史浩飞杜春雷
Owner CHONGQING GRAPHENE TECH
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