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Adjustable perfect wave absorber based on graphene photonic crystal structure

A photonic crystal and wave absorber technology, applied in the field of wave absorber materials, can solve the problems of adding a sandwich photonic crystal structure, etc., and achieve the effect of saving manufacturing costs

Active Publication Date: 2020-03-27
NAT UNIV OF DEFENSE TECH
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Problems solved by technology

[0003] In this field of research, there is no research achievement on realizing perfect wave absorption in the sandwiched FP resonator, and there is no technology to realize the perfect absorption by adding the sandwiched photonic crystal structure in the graphene absorber only by changing the graphene absorber. The chemical potential and the angle of the incident wave can adjust the resonant frequency of the perfect absorption mode without changing the geometry of the absorber.

Method used

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  • Adjustable perfect wave absorber based on graphene photonic crystal structure
  • Adjustable perfect wave absorber based on graphene photonic crystal structure
  • Adjustable perfect wave absorber based on graphene photonic crystal structure

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Embodiment Construction

[0016] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0017] The invention is an adjustable perfect absorber based on graphene photonic crystal structure, including triple nested FP resonant cavity, top mirror (A / B) n , bottom mirror (B / A) m Three parts, in which the triple nested FP resonator is composed of three layers of photonic crystal defect cavities sandwiched, and the first layer of cavity is located around the graphene monolayer, and the material of the first layer of cavity is silicon dioxide; it is attached to The defect cavity aro...

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Abstract

The invention belongs to the technical field of wave absorber materials, and particularly relates to an adjustable perfect wave absorber based on a graphene photonic crystal structure. The adjustableperfect wave absorber comprises a top mirror 1, a bottom mirror 2 and a triple nested FP resonant cavity located between the top mirror and the bottom mirror. The specific structure of the triple nested FP resonant cavity is as follows: a graphene single layer 3, a first layer cavity 4 attached to the upper and lower surfaces of the graphene single layer, a second layer cavity 5 attached to the outer surface of the first layer cavity, and a third layer cavity 6 attached to the outer surface of the second layer cavity. By changing the chemical potential of graphene and the angle of incident waves, the resonant frequency of a perfect absorption mode can be adjusted without changing the geometric structure of the wave absorber.

Description

technical field [0001] The invention belongs to the technical field of absorber materials, in particular to an adjustable perfect absorber based on graphene photonic crystal structure. Background technique [0002] In the prior art, optoelectronic devices designed using the two-dimensional material graphene have many excellent characteristics, for example, changing the applied voltage in the terahertz band can adjust the surface conductivity of graphene, extremely narrow or extremely wide spectral characteristics, these characteristics It is very suitable for detecting and sensing target signals, so graphene is widely used in the design of absorbers. However, the absorption rate of single-layer graphene is only 2.3%, and in order to increase the absorption rate of single-layer graphene, FP resonance technology is often used. FP resonances can be excited in photonic crystals with defective cavities. When single-layer graphene is placed in the FP cavity, the interaction betw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00
CPCG02B5/003
Inventor 陈雨微刘培国查淞林铭团刘翰青
Owner NAT UNIV OF DEFENSE TECH
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