Method for high-effectively regulating the dislocation density of local area of CVD monocrystal diamond

Abstract

The invention discloses a method for high-effectively regulating the dislocation density of local area of CVD monocrystal diamond. In the method, composite technologies such as plasma etching, surfaceappearance detection and orthogonal polarization imaging, etc., a high-dislocation density area in a diamond substrate can be rapidly and destructively determined; by using high-energy particle beamssuch as femtosecond laser, the high-dislocation density area in the diamond substrate is patterned flexibly and high-effectively. With combination of selection and arrangement of a mask material in agraphical area, the method can block the extension of the dislocation of bottom area of the processed pattern to the CVD diamond growing layer, regulate the extension direction of the dislocation line on the side area of the pattern, and release the stress during the process of growing the graphical area, thus reducing the dislocation density and residual stress of the local area in the CVD diamond growing layer effectively, achieving pertinent regulation of defects and crystallization quality of the growing layer, and improving the growing uniformity and crystal quality of the CVD diamond.

Description

technical field [0001] The invention belongs to the field of single-crystal diamond growth, and in particular relates to a method for efficiently regulating the dislocation density of local regions in CVD diamond based on rapid detection of defects in diamond and micro-nano processing of high-energy particle beams such as femtosecond lasers. Background technique [0002] Diamond has excellent physical and chemical properties, its band gap is about 5.5 eV, and its thermal conductivity is as high as 22 W cm -1 ·K -1 , and has the characteristics of high breakdown voltage, small dielectric constant and high radiation hardness, which is obviously superior to the third-generation semiconductor materials such as GaN and SiC (Fu Fangbin, Jin Peng, Liu Yali, Gong Meng, Wu Ju, Wang Zhanguo. MPCVD growth semiconductor Research status of diamond materials [J]. Micro-Nano Electronics Technology, 2016, 53(09): 571-581+587.), is the key material for future chip manufacturing. Based on...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for efficiently controlling the dislocation density of CVD single crystal diamond in local areas, so as to solve the problem that the existing methods can only be processed as a whole, and cannot be locally adjusted for the inhomogeneity of the diamond substrate.

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