Method for preparing monolayer graphene with controllable stripe width by laser heating

Abstract

The invention relates to a method for preparing monolayer graphene with controllable stripe width on a substrate by utilizing laser beam heating through a grating, belonging to the technical field of semiconductor novel materials. Graphene has higher electron transport properties, good response frequency and wider light band transparency, and can achieve the optimization of high-speed electronic device fabrication. Therefore, the realization of growth of high-quality stripe-shaped graphene materials is important for the development of electronic technology. Through the method, stripe-shaped monolayer graphene is prepared by heating the substrate with lasers through the grating, the lithography step is omitted, the method is performed by one step and is simple and feasible, and the growth materials are not polluted by additional materials; and at the same time, the laser beams can be quickly removed, the method has the characteristics of rapid temperature reduction and the like, the unnecessary multi-layer graphene growth can be reduced, the graphene monolayer growth is effectively realized, and the method is characterized by acquiring the discrete beams through the grating, thus obtaining the discrete stripe-shaped monolayer graphene.

Description

technical field

[0001] The invention relates to a nickel-plated film on a substrate, and uses a laser heating method to prepare graphene with controllable stripe width, which belongs to the technical field of semiconductor materials. Background technique

[0002] The processing limit of silicon materials is generally considered to be 10nm line width. Restricted by physical principles, it is impossible to produce products with stable performance and higher integration level if it is smaller than 10 nanometers. However, the emergence of graphene is expected to bring breakthroughs in the development of ultra-high-speed integrated circuits.

[0003] Large-area grown graphene can be used as a substitute for Si materials in integrated circuits. It has high electron transport characteristics, good response frequency and wide optical band transparency, which can realize the optimization of high-speed electronic device preparation.

[0004] At present, the main methods of growing g...