Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface oxygen vacancy defect modified bismuth tungstate photocatalyst, and preparation method and applications thereof

A vacancy defect, photocatalyst technology, applied in catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, etc., can solve problems such as unfavorable photocatalytic reactions, small surface area and specific surface area , to achieve the effect of simple preparation process, increased amount, and widened visible light response range

Inactive Publication Date: 2019-11-19
GUANGDONG UNIV OF TECH
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the bismuth tungstate in the grain state of large grains often exists in the form of sheet-like stacks, which has a small surface area and specific surface area, which also leads to a small number of photocatalytic active sites exposed on the surface, which is very unfavorable to photocatalytic activity. Catalyzed reaction proceeds

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface oxygen vacancy defect modified bismuth tungstate photocatalyst, and preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Dissolve 1mmol of sodium tungstate dihydrate in 7.5ml of deionized water; dissolve 1mmol of bismuth nitrate pentahydrate in 7.5ml of dilute nitric acid solution with a pH value equal to 5; both are ultrasonicated until clarified to obtain tungsten sodium bismuth nitrate precursor and bismuth nitrate precursor.

[0032] 2. The clean flat FTO conductive glass is tilted and placed in a 25ml high-temperature reaction kettle, and the bismuth nitrate precursor solution and the sodium tungstate precursor solution are mixed to obtain the bismuth tungstate precursor solution in the state of milky white turbid liquid, and immediately transferred to the high-temperature reaction kettle middle. Hydrothermal reaction at 100°C for 3 hours, rinse the sample with deionized water after the reaction, remove excess reaction residue, dry under nitrogen, then transfer to a muffle furnace for dry crystallization, and grow tungsten on a flat FTO conductive glass bismuth film.

[0033] 3....

Embodiment 2

[0042] 1. Dissolve 0.5mmol of sodium tungstate dihydrate in 7.5ml of deionized water; dissolve 0.2mmol of bismuth nitrate pentahydrate in 7.5ml of dilute nitric acid solution with a pH value equal to 6; Obtain sodium tungstate precursor solution and bismuth nitrate precursor solution.

[0043] 2. The clean flat fluorine-doped tin oxide is placed in a 25ml high-temperature reaction kettle, and the bismuth nitrate precursor solution and sodium tungstate precursor solution are mixed to obtain a milky white turbid liquid bismuth tungstate precursor solution, and immediately transfer to high temperature in the reactor. Hydrothermal reaction at 150°C for 3 hours, rinse the sample with deionized water after the reaction, remove excess reaction residue, dry under nitrogen, then transfer to a muffle furnace for dry crystallization, and grow tungsten on a flat FTO conductive glass bismuth film.

[0044] 3. The bismuth tungstate thin film is kept in a muffle furnace at 600°C for 2 hour...

Embodiment 3

[0047] 1. Dissolve 0.3mmol of sodium tungstate dihydrate in 7.5ml of deionized water; dissolve 0.2mmol of bismuth nitrate pentahydrate in 7.5ml of dilute nitric acid solution with a pH value equal to 3; Obtain sodium tungstate precursor solution and bismuth nitrate precursor solution.

[0048] 2. The clean flat fluorine-doped tin oxide is placed in a 25ml high-temperature reaction kettle, and the bismuth nitrate precursor solution and sodium tungstate precursor solution are mixed to obtain a milky white turbid liquid bismuth tungstate precursor solution, and immediately transfer to high temperature in the reactor. Hydrothermal reaction at 180°C for 3 hours, rinse the sample with deionized water after the reaction, remove excess reaction residue, dry under nitrogen, then transfer to a muffle furnace for dry crystallization, and grow tungsten on a flat FTO conductive glass bismuth film.

[0049] 3. The bismuth tungstate thin film is kept in a muffle furnace at 450°C for 2 hour...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of photocatalysis, and discloses a surface oxygen vacancy defect modified bismuth tungstate photocatalyst, and a preparation method and applications thereof. The preparation method comprises following steps: a sodium tungstate precursor solution and a bismuth nitrate precursor solution are mixed to obtain a bismuth tungstate precursor solution, ultrasonic treatment is carried out, the bismuth tungstate precursor solution is introduced into a high temperature reaction vessel with a conductive substrate, hydro-thermal reaction is carried out at 100 to180 DEG C, deionized water is adopted for washing, under nitrogen gas flow, drying is carried out, sintering is carried out at 450 to 600 DEG C, and an obtained bismuth tungstate film grows on the flat conductive substrate is subjected to heat processing at 150 to 400 DEG C at reductive atmosphere to obtain a finished product. The surface of the obtained surface oxygen vacancy defect bismuth tungstate film possesses more active sites, so that higher photoelectric conversion efficiency is achieved; and at the same time, existing of oxygen vacancy defects is capable of realizing micro adjustingof forbidden bandwidth Eg of the bismuth tungstate photocatalyst, narrowing Eg, and obtaining wider visible light response range.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic hydrogen production, and more specifically relates to a bismuth tungstate photocatalyst modified by surface oxygen vacancy defects and a preparation method and application thereof. Background technique [0002] With the rapid development of society and the excessive development and utilization of fossil energy, the global storage of fossil energy is limited. If there is no cheap alternative energy with abundant reserves, then the problem of energy shortage will be a society that every country will inevitably face. question. Hydrogen energy is the cleanest and most environmentally friendly energy known so far. The final product of its combustion is water, which does not cause secondary pollution to the environment. Photocatalytic cracking of water into hydrogen and oxygen is the most ideal strategy for hydrogen production. The first is low energy consumption. Photocatalytic water cracking u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J23/31B01J35/06B01J37/08B01J37/10B01J37/18C01B3/04A62D3/17A62D101/20
CPCB01J23/31B01J37/10B01J37/082B01J37/18C01B3/042A62D3/17C01B2203/1041C01B2203/0277A62D2101/20B01J35/59B01J35/39Y02E60/36
Inventor 陈其赞罗东向张梦龙李洁
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com