High-frequency coil structure capable of simultaneous producing eight silicon cores and other crystal material

Abstract

The invention discloses a high-frequency coil structure capable of simultaneously producing eight silicon cores and other crystalline materials, and relates to the technical field of the high-frequency coils. The high-frequency coil structure comprises a radial splitter box (14) for guiding current (15), and eight inner bores (8) one inner bore of which is arranged at the middle part of the high-frequency coil and seven inner bores of which are evenly distributed around the inner bore at the middle part in a petaline shape, an oblique opening (13) arranged on one side of a current delivery and cooling water delivery copper pipe A(11) and a current delivery and cooling water delivery copper pipe B(12) is in through connection with the inner bore at the middle part; and the radial splitter box extends outwards to the position between every two inner bores except for the oblique opening from the inner bore at the middle part. The oblique opening is connected with the inner bore at the middle part, and the radial splitter box is radially distributed at the position between every two peripheral inner bores by the inner bore at the middle part, which causes the current to evenly surround the eight inner bores for running under the current splitting action of the splitter box while the current is running, thus realizing the purpose that the current is evenly distributed around the eight inner bores.

Description

Technical field: [0001] The invention relates to the technical field of high-frequency coils, in particular to a new type of coil that can distribute current evenly around the inner hole, heat silicon cores or other crystal materials evenly through the current, and produce eight silicon cores and other crystal materials at the same time. High frequency coil structure. Background technique: [0002] At present, silicon cores are used in a huge amount in China; in the existing process of producing silicon cores, monocrystalline silicon and other material crystal zone melting methods, most of them use a monocular high-frequency coil, and its working principle is as follows: When working, pass high-frequency current to the high-frequency coil, so that the high-frequency coil generates current to inductively heat the raw material rod, and the upper end of the heated raw material rod forms a melting zone, and then inserts the crystal into the melting zone, and slowly lifts the cry...

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Problems solved by technology

[0006] Through the use of the above-mentioned patents for the past two years, the current running around the inner hole cannot achieve the expected purpose. As the structure described in the above-mentioned two patent application documents, the inner holes are arranged in a radial shape, and there are slanted openings except for the middle part and the connection. There are more currents in the inner holes, and the surrounding currents of the other inner holes are affected by the principle of high-frequency current operation, so that the temperature of most inner holes is much lower than the temperature of the inner holes close to or connected to the oblique opening (that is, the current approaches Road), due to the phenomenon of the current approaching the road, the result is that the diameter of the raised crystal is very large, resulting in an increase in the number of defective products

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