Wafer grade reliability parallel test method for field effect tube negative temperature instability

A field effect tube and instability technology, which is applied in the WLR parallel test field of field effect tube negative temperature instability, can solve the problems of sample scrapping, long measurement delay time, and being easily affected by static electricity, etc., to reduce the impact of static electricity , reduce the measurement time, the effect of rapid measurement

Inactive Publication Date: 2009-06-10
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0008] The present invention provides a WLR parallel test method for negative temperature instability of field effect tubes in order to solve the shortco...

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  • Wafer grade reliability parallel test method for field effect tube negative temperature instability
  • Wafer grade reliability parallel test method for field effect tube negative temperature instability
  • Wafer grade reliability parallel test method for field effect tube negative temperature instability

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Embodiment Construction

[0017] The present invention has adopted the test method of WLR when carrying out negative temperature instability test, and has made further improvement to it, as Figure 4 As shown, the ground terminals B of the 8 FETs are all connected to the same measurement unit through the probe card, and the sources S of two adjacent FETs can be connected together, and are connected together through the probe card. On the same measurement unit, the other ports D and G of the FET are connected to the measurement unit through probes, so that the saturation current of 8 FETs can be tested at the same time on each cutting line. Reduce measurement time as much as possible.

[0018] It can be concluded from the measurement that when 8 field effect transistors are connected to each cutting line, the measurement time can be reduced to 1ms, so when the applied voltages are 1.32V, 1.4V, 1.5V, 1.6V, 1.8V , 2.0V, 2.2V and 2.4V, the saturation current diagram of 8 FETs is as follows Figure 5 As s...

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Abstract

A WRL testing method of field effect tube negative temperature instability is disclosed, each port of the field effect tube is connected with a measuring unit through a probe card, for testing saturation current of the field effect tube; a grid and a drain electrode of the field effect tube are respectively connected with the measuring unit through the probe card; all the grounding ports of the field effect tube are connected in series arranged on the same measuring unit through the probe card; source electrodes of two adjacent field effect tubes are connected in series to arranged on the same measuring unit through the probe card. The testing method can effectively reduce testing time and reduce electrostatic effect.

Description

technical field [0001] The invention relates to the detection field of CMOS tubes, in particular to a WLR (wafer level reliability test) parallel test method for negative temperature instability of field effect tubes. Background technique [0002] NBTI (Negative Bias Temperature Instability, Negative Temperature Instability) is an important content to detect the stability of CMOS technology. In recent years, the negative temperature instability and fast recovery characteristics of devices have attracted more and more attention. As we all know, there is a certain delay time between the saturation current of a field effect transistor (MOSFET) from the removal of the stress voltage to the measurement. The specific operation method is that we first measure the saturation current I0 of a field effect transistor, and then add a constant After removing the stress voltage, measure the saturation current of the field effect tube, denoted as I1, then add the constant stress voltage, a...

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Application Information

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IPC IPC(8): G01R31/26
Inventor 张卿彦宋永梁
Owner SEMICON MFG INT (SHANGHAI) CORP
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