50 results about "Parasitic extraction" patented technology

A hierarchical representation encapsulates the detailed internal composition of a sub-circuit using the notion of a cell definition (a CellDef). The CellDef serves as a natural unit for operational reuse. If the computation required for the analysis or manipulation (e.g. parasitic extraction, RET, design rule confirmation (DRC), or OPC) based on a CellDef or one cell instance can be applied, with no or minimal additional effort, to all or a significant subset of other instances of the cell, very substantial reduction in computational effort may be realized. Furthermore, a hierarchical representation also allows for the partitioning of the overall analysis/manipulation task into a collection of subtasks, e.g. one per CellDef. Multiple jobs may then be distributed across a large number of computational nodes on a network for concurrent execution. While this may not reduce the aggregate computational time, a major reduction in the overall turnaround time (TAT) is in itself extremely beneficial.

A method and structure for a method of determining characteristics of parasitic elements in an integrated circuit comprising, identifying manufacturing process parameters of devices in the integrated circuit, calculating a parasitic performance distribution for each of the devices based on the manufacturing process parameters, combining the parasitic performance distribution for each of the devices into a net parasitic value, and forming a parameterized model based on the net parasitic values.

Disclosed is a method for designing a semiconductor device. In an existing semiconductor design, a time delay effect caused by a dummy metal interconnection cannot be reflected. In order to address this disadvantage, a real metal fill pattern and a virtual metal fill pattern are employed for a layout parasitic extract step such that a time delay effect caused by the dummy metal pattern in semiconductor design is reflected. Accordingly, a semiconductor device can be designed by effectively reflecting a time delay effect. According to the method, since a real metal fill pattern and a virtual metal fill pattern are employed for a layout parasitic extract step so that resistor capacitance values of interconnections (including dummy interconnections) between logic elements are extracted, it is possible to more exactly design a semiconductor device by tacking a time delay effect into account.

An electromagnetic parameterized cell (EM Pcell) is generated for a local environment of an integrated circuit (IC) design for an electronic design flow. A set of parasitics extracted netlists is developed from a set of Pcell layouts and an external EM environment. The parasitics extracted netlists are simulated to provide a set of performance metrics. When a symbolic view of the EM Pcell is displayed to a designer during a subsequent schematic phase of the design flow, the performance metrics are accessed from a design library, to increase accuracy of parameter value selection for the EM Pcell without a parasitics extraction of the physical layout and generation of a parasitics extracted netlist.

One embodiment of the present invention provides a system for determining an electrical property for an interconnect layer. During operation, the system receives interconnect technology data which includes nominal parameter values for a first interconnect layer, and parameter-variation values which represent variations in the nominal parameter values due to random process variations. Next, the system receives an interconnect template which describes the geometry of a portion of a second interconnect layer. The system then determines electrical property data for the interconnect template using the interconnect technology data. The electrical property data can include a nominal electrical property value, and sensitivity values which represent the sensitivities of the nominal electrical property value to variations in the nominal parameter values. Next, the system stores the electrical property data and the interconnect technology data in a storage.

A method and system for performing parasitic extraction, wherein the method comprises calculating the minimum output impedance for a network-connected component comprising a plurality of ports thereby producing a labeled impedance, estimating the minimum output impedance for every net, comparing the labeled impedance with the estimated impedance, and selecting the net which needs to be extracted based on a ratio of values of the labeled impedance and the estimated impedance. The step of calculating comprises labeling every port with a minimum size of port impedance, a resistance from a port to power, and a minimum capacitance of a port-net inside the network connected component. The step of estimating comprises using a geometry of segments of the net comprising a summation of area and perimeter values of all the segments of the net, or calculating a resistance over a length of a total net versus an average width of the net.

The invention discloses a through si via radio frequency test structure which is formed by a first test structure and a second open circuit de-embedding structure. The first test structure comprises a first port and a second port of a GSG bonding pad structure; signal ends of the first port and the second port are connected in a short circuit manner by a first top metal; a tested through si via is arranged between signal ends of the first port and the second port; the top of the tested through si via is connected with the first top metal; the bottom of tested through si via is connected with a second back metal; and grounding terminals of the first port and the second port are respectively connected with the second back metal through a grounding through si via array. The second open circuit de-embedding structure and the first test structure, after the first top metal and tested through si via are removed, are the same in structure. The invention also discloses a parasitic extracting method of the through si via radio frequency test structure. According to the invention, the accuracy of testing the parasitic resistance and inductance of the through si via can be improved, and the test structure area and the process cost can be reduced.

A method and structure for performing parasitic extraction for a multi-fingered device comprising of establishing a maximum processing width of a finger of the device, dividing fingers of the device that exceed the maximum width into sub-fingers, determining whether ones of the fingers and the sub-fingers have similar characteristics, combining ones of the fingers and the sub-fingers that have similar characteristics into combined fingers, and extracting parasitic values from the fingers, the sub-fingers and the combined fingers.

Techniques for efficiently determining whether an interconnect line has an impedance component value below a maximum specified value. A specified maximum impedance component value is used to limit the number of interconnect lines that are analyzed by a parasitic extraction analysis process. An analysis window is created based upon the characteristics of the interconnect lines and the specified maximum impedance component value. The size of the window corresponds to the minimum length of the interconnect line that would have the specified maximum impedance component value. Once the analysis window has been created, the interconnect lines are examined to determine if any of them reaches to (or beyond) the analysis window, whereby interconnect lines that exceed the specified maximum impedance component value can be identified. If there are any remaining interconnect lines that have not been determined to exceed the specified maximum impedance component value through the use of the analysis window, then the impedance component values of these remaining interconnect lines can be specifically determined using a parasitic extraction process.

Systems and methods are provided for extracting parasitics in a design of an integrated circuit with multi-patterning requirements. The method includes determining resistance solutions and capacitance solutions. The method further includes performing parasitic extraction of the resistance solutions and the capacitance solutions to generate mean values for the resistance solutions and the capacitance solutions. The method further includes capturing a multi-patterning source of variation for each of the resistance solutions and the capacitance solutions during the parasitic extraction. The method further includes determining a sensitivity for each captured source of variation to a respective vector of parameters. The method further includes determining statistical parasitics by multiplying each of the resistance solutions and the capacitance solutions by the determined sensitivity for each respective captured source of variation. The method further includes generating as output the statistical parasitics in at least one of a vector form and a collapsed reduced vector form.

A method of simulating an electrostatic discharge (ESD) circuit layout is disclosed. A netlist of an electronic circuit is pre-simulated. A circuit layout, including an ESD circuit layout, is accordingly generated. Parasitic is extracted according to the generated circuit layout. The ESD circuit layout is post-simulated according to an ESD waveform and a result of the parasitic extraction.