14results about How to "Inhibition defect" patented technology

This invention provides a glass melt conveying device and its temperature control method, comprising an inner wall, an outer wall, and a cavity disposed between the inner and outer walls; both the inner and outer walls are made of refractory materials; the surface of the inner wall is provided with an anti-erosion layer; multiple inner wall temperature detectors are uniformly arranged in the inner wall; the outer sides of the two walls of the cavity are respectively attached to the inner and outer walls; multiple supports are uniformly arranged in the cavity; the two ends of the supports are respectively fixed to the inner sides of the two walls of the cavity. This invention can achieve a heat preservation effect on the bottom and sides of the glass melt through the anti-erosion layer, preventing related defects caused by temperature differences. At the same time, using non-precious metals such as molybdenum as the anti-erosion layer to prevent the glass melt from eroding greatly reduces construction costs; for platinum tube-type glass melt conveying devices, molybdenum electrode heating can be used instead of platinum heating in the high-temperature section, eliminating the situation where the entire channel is electrified, thereby improving production safety.

The invention discloses a preparation process of air entrapment prevention low-bubble moisture curing reaction type polyurethane honeycomb glue, and relates to the technical field of chemical synthesis processes. The process comprises the following steps: firstly, introducing sacrificial isocyanate, and converting deep bound water in polyhydric alcohol into gas and deeply removing the gas in cooperation with pulse type nitrogen gas stripping and reverse vacuum linkage; and then carrying out high-temperature solubilization hysteresis treatment to forcibly dissolve by-product particles so as to eliminate bubble nucleation centers. In the polymerization stage, a reaction type low-surface-energy modifier is adopted for in-situ end capping, and the surface tension of the melt is reduced; a negative pressure gradient cooling procedure is executed in the discharging stage, the vacuum degree is gradually increased along with cooling, and the gas under-saturation state of the glue solution is locked. According to the invention, the hidden danger of endogenous bubbles is effectively eliminated, the finished product glue solution is endowed with the capabilities of inhibiting mechanical gas entrapment and actively absorbing interface bubbles during roll coating, and the flatness and bonding quality of the composite honeycomb plate are remarkably improved.

[Problem] The present invention aims to provide an aqueous solution for manufacturing electronic devices capable of suppressing defects. [Solution] An aqueous solution for manufacturing electronic devices, comprising: an acid (A); a surfactant (B); and a solvent (C); wherein the acid (A) has a pKa (H2O) of 3.0 or less, and the number of carbon atoms contained in one molecule of the acid (A) is 0 to 8; the surfactant (B) substantially contains no ethylene oxide repeating units and no propylene oxide repeating units; and the solvent (C) contains water (C-1). The aqueous solution for manufacturing electronic devices is a high-performance material that can be used in nanotechnology processes for semiconductor device manufacturing, for example, in manufacturing processes for semiconductor devices for controlling liquid crystals, quantum dots, or OLED displays formed on a substrate.

The invention belongs to the technical field of continuous casting, and particularly relates to an on-line heating method for a surface layer and a subsurface of a large-section casting blank, which comprises the following steps of: arranging heating devices in front of straightening rollers of a large-section casting blank continuous casting machine, between the straightening rollers and between support rollers in front of the straightening rollers, and heating an area within 20mm between the surface layer and the subsurface of the large-section casting blank, the temperature of the surface layer and the area within 20 mm under the surface of the large-section casting blank ranges from the lower temperature limit of the thermoplastic temperature interval of the cast steel grade to 1250 DEG C before a straightening roll and in the straightening process, and the percentage reduction of area of the surface layer and the area within 20 mm under the surface of the large-section casting blank is larger than or equal to 0.4. By controlling the temperature of the surface layer of the casting blank and the temperature of the area within 20 mm under the surface in front of the straightening roll and in the straightening process, the surface layer and subsurface plasticity of the large-section casting blank is improved, defects generated in the straightening process of the casting blank are remarkably restrained, and the surface layer quality and the yield of the casting blank are improved.

A kind of low vacuum laser welding method for GH4169 high-temperature alloy and SS304 stainless steel, the present application belongs to laser welding technical field.The present application solves the problem that the existing welding method cannot realize the low-cost and high-quality connection of medium thickness and above GH4169 alloy and SS304 stainless steel.One, welding assembly;Two, low vacuum laser welding;Three, heat treatment.The present application is used for the low vacuum laser welding of GH4169 high-temperature alloy and SS304 stainless steel.

The invention belongs to the technical field of pipe manufacturing and intelligent control, and solves the problems of longitudinal cracks, scratches, pits, non-uniform size and overlarge residual stress on the surface caused by thermal-mechanical coupling imbalance in existing pipe extrusion molding. The invention discloses a pipe forming system based on real-time defect feedback. The pipe forming system comprises an execution device, a central control device, a multi-mode sensing device and a three-section type temperature control device. A three-area temperature control structure of a primary cooling section, a constant temperature section and a final cooling section is adopted, a multi-mode sensing device is arranged at an outlet of each section to collect surface images, wall thickness and temperature data in real time, a defect characteristic spectrum is constructed, and a thermal coupling regulation and control instruction is output by matching with a process knowledge base; stress relaxation and shaping control is achieved through constant-temperature section partition heating and final cooling section gradient cooling, and meanwhile process parameters are dynamically corrected in combination with closed-loop feedback compensation. The method can effectively inhibit pipe surface defects, reduce residual stress, improve wall thickness uniformity and mechanical properties, and improve production stability and product qualification rate.

The application discloses a kind of micro-nano hard ceramic phase composite reinforced laser cladding nickel-based wear-resistant coating and its preparation method and application.The preparation method uses discharge plasma ball milling process to mix micro-nano hard ceramic and Ni-based metal powder for modification treatment, utilizes the synergistic effect of plasma activation and mechanical ball milling force of pulse discharge, effectively breaks the nano ceramic phase agglomerate, realizes the uniform dispersion distribution of nano ceramic phase in composite powder;By adopting the optimization of laser cladding process parameters, and cooperating with ultrasonic vibration auxiliary and / or pulse laser composite energy input, etc. Regulating means, prepare the nickel-based wear-resistant coating with uniform and dense structure, high hardness, excellent wear resistance and good metallurgical bonding with base material, which can meet the service requirements of mining machinery, oil drilling and production, metallurgical roller and other harsh working conditions, and has wide application prospect.

The application discloses a kind of resource utilization of ceramic glaze of raffinate acid, it is the powder prepared with raffinate acid as main raw material;Each raw material and its weight fraction included are as follows: raffinate acid 16-20 parts, citric acid 5-8 parts, alcohol additive 4-7 parts, water 5-10 parts.The application takes industrial by-product raffinate acid as main raw material, fully recycles and utilizes effective elements in raffinate acid, further combines the regulation and control mechanism based on citric acid and alcohol additive and segmented temperature control process, and can realize high value-added resource utilization of raffinate acid in glaze field, with significant economic and environmental benefits;The obtained ceramic glaze can give consideration to good sintering crystallization effect, gloss and mechanical property, and has wide applicability.

The invention relates to a multilayer structure having a paper layer (A), an inorganic vapor-deposited layer (B) with a specific average thickness located on one side of the paper layer (A) having a specific basis weight, a barrier resin layer (C) containing a specific ethylene-vinyl alcohol copolymer (c) as the main component, an adhesive resin layer (D), and a heat-fused layer (E) containing a polyolefin (e) satisfying a specific melting point as the main component. Layers (B), (C), and (D) are all directly stacked in sequence, with layer (E) being the outermost layer. The ratio of the total average thickness of the layers with polyolefin resin as the main component to the total average thickness of all layers except the paper layer (A) is 0.50 or more, and the invention does not have a layer containing a resin with a melting point of 200°C or more as the main component or a metal layer with an average thickness of 1 μm or more.

The objective of this invention is to provide a semiconductor processing solution that inhibits the dissolution of cobalt and suppresses the formation of defects after further water rinsing following processing of a silicon substrate. The semiconductor processing solution of this invention comprises water, an organic solvent, a corrosion inhibitor, a chelating agent, and an alkaline compound, and does not contain any of hydroxylamine or its salts. The alkaline compound is an alkaline inorganic compound or has a composition selected from -NH2 and -NHR. N -NR N 2 and -N + R N 3 X ‑ The organic solvent is an alkaline organic compound with a molecular weight of less than 150 and at least one group in the group consisting of the above-mentioned organic solvent, and the content of the above-mentioned organic solvent is 0.1 to 9.5 by mass relative to the total mass of the above-mentioned semiconductor processing liquid.

The present invention relates to a release film for resin sheet molding. The object of the present invention is to provide a release film which can mold a resin sheet, particularly a ceramic green sheet, of an ultra-thin layer without defects by making a release film having a release layer with particularly excellent smoothness and peelability. A release film for resin sheet molding, having a polyester film as a base material and a release layer, wherein the polyester film has a surface layer A substantially free of inorganic particles, and the release layer is formed on the surface layer A, and the release layer is a layer formed by curing a release layer-forming composition, and the release layer-forming composition contains a cationically curable polydimethylsiloxane (a), and the area surface average roughness (Sa) of the release layer is 2 nm or less, and the number of protrusions of 10 nm or more in height present on the surface of the release layer is 200 / mm 2 The following.

This invention discloses a device and method for regulating the current distribution of ultra-thin strips based on flexible loading, belonging to the field of ultra-thin strip processing technology. It includes a symmetrically arranged mounting base, on which a support assembly is mounted. Multiple distributed pressure modules are evenly spaced on the support assembly. Each distributed pressure module includes a first driving part fixedly connected to the support assembly, which includes a first driving member fixedly connected to the support assembly. A push rod follower plate is fixedly connected to the first driving member, and a second driving part is fixedly connected to the push rod follower plate. The second driving part includes a pressure sensor and a pressing component respectively disposed on the push rod follower plate. A flexible auxiliary roller and an electrode shaft are located below the distributed pressure modules, with strip material positioned between the flexible auxiliary roller and the electrode shaft. The pressing component abuts against the flexible auxiliary roller. This invention eliminates the need for applying a large, destructive load, avoiding localized stress concentration and mechanical indentations caused by traditional rigid electrodes, thus perfectly protecting the surface quality of the ultra-thin, high-strength strip material.

This invention provides a method for producing epitaxial wafers and an epitaxial wafer. The method includes: obtaining the resistivity of a substrate wafer; adjusting the heating power of an epitaxial growth apparatus according to the resistivity and / or the target epitaxial layer thickness of the substrate wafer; and performing epitaxial growth on the substrate wafer using the adjusted epitaxial growth apparatus to obtain an epitaxial wafer. This invention, by adjusting the heating power of the epitaxial growth apparatus for substrate wafers with different resistivities and / or target epitaxial layer thicknesses, allows for the use of appropriate epitaxial process conditions to perform epitaxial growth on the substrate wafer, thereby ensuring the quality of the produced epitaxial wafer.

The invention discloses a method for preparing a perovskite thin film through a solution two-step method and a perovskite solar cell, and the preparation method comprises the following steps: adding a low-temperature volatilization / sublimation component into a PbX2 solution to obtain a precursor solution, coating the surface of a substrate with the precursor solution, and carrying out the annealing to obtain a PbX2 thin film; and coating the PbX2 thin film with an organic ammonium salt solution, and carrying out annealing treatment to obtain the perovskite thin film. According to the method, a low-temperature volatilization / sublimation component is introduced into a PbX2 precursor solution, and the characteristic that the component escapes after being heated in the annealing process is utilized, so that the PbX2 film forms a loose porous structure communicated with pore channels. The structure can provide a sufficient channel for permeation of an organic ammonium salt solution, increase the contact area between PbX2 and organic cations, promote full reaction between PbX2 and organic cations, optimize the crystallization quality of the perovskite film, inhibit non-radiative recombination of carriers, and finally improve the photoelectric property of a perovskite device.