308results about How to "Inhibition defect" patented technology

Disclosed is a semiconductor device including an insulating layer, a source electrode and a drain electrode embedded in the insulating layer, an oxide semiconductor layer in contact with the insulating layer, the source electrode, and the drain electrode, a gate insulating layer covering the oxide semiconductor layer, and a gate electrode over the gate insulating layer. The upper surface of the surface of the insulating layer, which is in contact with the oxide semiconductor layer, has a root-mean-square (RMS) roughness of 1 nm or less. There is a difference in height between an upper surface of the insulating layer and each of an upper surface of the source electrode and an upper surface of the drain electrode. The difference in height is preferably 5 nm or more. This structure contributes to the suppression of defects of the semiconductor device and enables their miniaturization.

Provided are a method for manufacturing an electronic device and a separation apparatus used therefore, wherein a substrate and a resin layer closely connected thereto can be easily separated and removed within a short space of time without damage. When a support (17b) comprised of a support substrate (19b) and a resin layer (18b) is separated from a support-provided electronic device (10) which has a substrate (12b) having an electronic device member (14) and a resin layer (18b) which is secured to a support substrate (19b) and which is closely connected to the substrate (12b), a main surface on which a substrate (17b) to be separated later is not mounted is closely connected to a securing surface (20a) of a stage (20) to secure the support-provided electronic device (10), and a knife (30) is inserted between interfaces of the resin layer (18b) and the substrate (12b) of the support (17b) to be separated, at an end surface of the support-provided electronic device (10) secured to the stage (20) to thereby separate the support (17b) and an electronic device (16), thus to solve the aforementioned problem.

The invention discloses a slab sickle bending control system and a slag sickle bending control method used for a roughing mill, and belongs to the field of mechanical automatic control. The control system comprises a slab width detecting module, two side roller beam leveling modules, a computer control module and a storage unit. The slag width detecting module is used for processing centre line offset data detected by a width detector and sending the processed centre line offset data to the computer control module; the computer control module is used for calculating a leveling value of each gate by collecting a set value of slag and practically measured value data, and sending the leveling value to the two side roller beam leveling modules; and the two side roller beam leveling modules are used for regulating two side roller beams of the roughing mill according to the leveling value, and controlling the slab sickle bending. The control system is applicable on the roughing mill, capable of calculating the leveling value of each gate more accurately, and capable of effectively controlling slag sickle bending and guaranteeing stability of finishing rolling unit production, thereby relieving steel scrap caused by off-tracking, shifting and the like, increasing yield and bringing direct economic benefits for enterprises.

The objects of the present invention are to provide a polymer thin film having finer structure than the conventional product, excellent regularity over a wide range and only limited defects, patterned media, methods for producing the thin film and patterned media, and surface modifying agent used in these production methods.

The method of the present invention is for producing a polymer thin film with a plurality of microdomains regularly arranged in a continuous phase by microphase separation on a substrate, comprising steps for forming a grafted silsesquioxane film on the substrate, and for forming a pattern different in chemical properties from the grafted silsesquioxane film in such a way that the pattern corresponds to the microdomain arrangement.

A recess 14 is formed in a sole 9 of a head 4. The recess 14 is an example of an opening part. A socket 10 is mounted to the recess 14. A weight body 12 capable of being attached/detached is attached to the socket 10. The weight body 12 has an engaging part 32 and an exposed part E1. The socket 10 has an interposition part 11. The interposition part 11 is interposed in at least a part between the exposed part E1 and a head body h1 in an attached state where the engaging part 32 is placed at an engaging position EP. The exposed part E1 is exposed to the outside in the attached state. The interposition part 11 does not fix the weight body 12.

The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

The invention relates to a method for preparing a perovskite LED device based on surface ligand control, including the following steps: applying an organic solution of a hole injection layer materialto the surface of a conductive substrate, and forming a hole injection layer after annealing; dissolving cesium bromide, lead bromide and phenethylamine bromide in an organic solvent under the effectof a 3-(decyl dimethyl ammonium) propane-1-sulfonic acid inner salt surfactant to obtain a perovskite precursor solution, applying the perovskite precursor solution to the surface of the hole injection layer and obtaining a perovskite film after annealing; treating the surface of the perovskite film with an alkylamine organic solution to form a light-emitting layer; and successively preparing an electron transport layer, an electron injection layer and a metal cathode electrode on the surface of the light-emitting layer. The method of the invention is simple and convenient, has a wide range ofmaterials and good repeatability, and can achieve the device performance. Through surface ligand exchange, the flatness and uniformity of the perovskite film are improved, the formation of defects iseffectively suppressed, and the overall performance of the device is significantly improved.

An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.

A wiring board includes an insulating layer having a plurality of through holes formed therein, a base substrate layer positioned below the insulating layer, and a plurality of electrodes disposed on the base substrate layer, each electrode having an exposed surface exposed from a respective through hole, each exposed surfaces being coated with a flux. A plurality of solder balls are disposed on the fluxes in the through holes, respectively. An apparatus for mounting the solder balls on the plurality of electrodes includes: a solder ball removing unit configured to remove a first plurality of solder balls located other than in the through holes; and a solder ball pressing unit configured to press a second plurality of solder balls individually disposed in the through holes towards respective electrodes and into respective flux.

A process of cladding by welding includes the steps of: (1) preparing a workpiece having a cladding-scheduled portion including an exposed normal region, the exposed normal region having a normal surface including a possibility that a foreign substance portion exists, and the foreign substance portion to form a defect of cladding; (2) irradiating the exposed region of the cladding-scheduled portion of the workpiece with an high-density energy beam, the high-density energy beam capable of eliminating or decreasing the foreign substance portion, substantially without melting the exposed normal region of the cladding-scheduled portion; and (3) covering the exposed normal region of the cladding-scheduled portion of the workpiece with a clad layer.

A liquid ejecting apparatus includes a liquid container containing section, and a pressurizing section that pressurizes inside of the liquid container containing section. The liquid container containing section has a casing that contains a liquid container, a mounting member that is mounted with the liquid container, and a cover that covers an opening that is formed in the casing, the mounting member is arranged inside the casing on the opening side, the cover is arranged outside the casing on the opening side, and the mounting member is fixed to the cover.

The invention discloses a vibrating welding method of a laser scanning-TIG compound molten bath. The method is implemented by compounding laser scanning and TIG welding. According to the method, during welding, two compound welding modes of performing laser scanning of a groove first and performing welding by a TIG weld gun then or performing welding by the TIG weld gun first and performing laser scanning of the groove then are selected; as a result of different materials and welding demands, the track of the laser scanning molten bath has different modes. As the ranges on two sides of the laser scanning groove are same or different or only one side of the groove is scanned by laser, the scanning track can be round, sinusoidal and triangular or special regions are selectively scanned. By means of mutual enhancement and coupling action of laser and arc, the depth of fusion is increased and the efficiency is increased; the molten bath is stirred by scanning the welding molten bath by laser, so that the temperature gradient is reduced, the solidification and crystallization processes are improved, and the welding joint performance is improved.

A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe²⁺ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe²⁺ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.