2results about How to "Reduce defect formation" patented technology

The utility model discloses a production mould of motor shell, including forming mechanism, cooling water adjusting mechanism and adjusting auxiliary mechanism, the forming mechanism includes upper module and bottom module, the cooling water adjusting mechanism includes adjusting pipe and rotating sleeve, the adjusting auxiliary mechanism includes outer tooth ring and damping ring, and the forming mechanism realizes the accurate forming of motor shell through the cooperation of upper module, bottom module, forming block and forming groove, and the design of injection moulding hole through forming block ensures that injection moulding material fills evenly, optimizes injection moulding path, reduces bubble and defect formation, and the combination design of adjusting pipe and rotating sleeve is adopted to cooling water adjusting mechanism, realizes the accurate control to cooling water flow, and the cooperation structure of spin -in block and plugging board can change the flow area of adjusting pipe to adjust the cooling rate, and spin -in block provides constant pressure, ensures that the adjusting system is stable and reliable.

The application discloses a growth method of a high-carrier-concentration heavily doped gallium oxide epitaxial film, and mainly solves the problems of high cost, high defect density and low carrier concentration of a currently used heavily doped epitaxial film substrate. The implementation scheme is as follows: a sapphire substrate is selected and cleaned; the cleaned substrate is put into a reaction cavity of a MOCVD (Metal Organic Chemical Vapor Deposition) for pretreatment; two layers of buffer layers with different mechanisms are sequentially grown on the substrate by changing the temperature, pressure and ratio of reaction sources of the reaction chamber; a Ge heavily doped beta-Ga2O3 film with an epitaxial concentration of 10 19 cm ‑3 -10 20 cm ‑3 is epitaxially prepared on the second buffer layer by using a pulse MOCVD method with GeH4 as a dopant and a catalyst, and the epitaxial film is annealed, so that the preparation of the epitaxial film is completed. The defect density of the epitaxial film and the substrate use cost are reduced, and the carrier concentration is improved, so that the epitaxial film can be used for the preparation of power devices and switching devices.