Method for preparing semiconductor material through ion injection and fixed-point adsorption technologies

An ion implantation and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulty in achieving low defect density and process instability, achieve low defect density, reduce process difficulty, and increase stability. Effect

Active Publication Date: 2012-10-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for better control over crystal quality during manufacturing compared to previous methods such as liquid phase growth (LPE) techniques that resulted in lower levels of impurities like oxygen and nitrogen within the material due to their higher mobility towards atoms outside its surface layers. By utilizing this technique, researchers have been able to creatively produce more stable and reliable electronic devices from these improved technologies.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the efficiency and precision of producing advanced electronic devices such as transistor chips or memory elements without increasing costs associated therewith while maintaining good quality product characteristics. Current methods involve growing epilayer films containing embedded atoms onto a specialized wafer called Silicon On Insulate Substrate (SOIS). These techniques require expensive equipment like atomic force tools and plasma sources which limit wafers' ability to achieve smaller sizes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing semiconductor material through ion injection and fixed-point adsorption technologies
  • Method for preparing semiconductor material through ion injection and fixed-point adsorption technologies
  • Method for preparing semiconductor material through ion injection and fixed-point adsorption technologies

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Such as Figure 1~Figure 9 As shown, this embodiment provides a method for preparing semiconductor materials using ion implantation and fixed-point adsorption processes, which at least includes the following steps:

[0044] Such as Figure 1~Figure 2 As shown, step 1) is firstly performed to provide a first Si substrate 10, and Si substrates are alternately formed on the surface of the Si substrate. x Ge 1-x layer 111 and Si layer 112, forming at least one period of Si x Ge 1-x / Si superlattice structure 11, where 0≤x<1.

[0045] The Si x Ge 1-x The thicknesses of the layer 111 and the Si layer 112 are both 1-10 nm. In this embodiment, three periods of Si are formed on the surface of the first Si substrate 10 by chemical vapor deposition. x Ge 1-x / Si, wherein, x is 0.9, 0.8, 0.7 according to the order of formation, and the Si x Ge 1-x Both the layer 111 and the Si layer 112 have a thickness of 8 nm. Of course, in its embodiment, the Si x Ge 1-x The period...

Embodiment 2

[0060] Such as Figure 10~Figure 19 As shown, this embodiment provides a method for preparing semiconductor materials using ion implantation and fixed-point adsorption processes, such as Figure 10~16As shown, its steps 1)~step 3) are as step 1)~step 3) in embodiment 1, the subsequent steps of this embodiment are:

[0061] Such as Figure 17 shown, proceed to step 4), where the relaxed Si z Ge 1-z A strained Si layer 18 is formed on the surface of the layer 15, and the thickness of the strained Si layer 18 is less than its critical thickness.

[0062] The strained Si layer 18 is formed by chemical vapor deposition, since the relaxed Si z Ge 1-z Layer 15 has the characteristics of low defect density and high relaxation, so the Si layer grown on it has the characteristics of high strain and low defect density.

[0063] Such as Figure 18 As shown, proceed to step 5), providing a second Si substrate 17 with an oxide layer 16 on the surface, and bonding the oxide layer 16 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a semiconductor material through ion injection and fixed-point adsorption technologies. The method comprises the steps of firstly extending at least one period of an SixGe1-x/Si superlattice structure (x is greater than or equal to 0 and smaller than 1) on an Si substrate, sequentially growing an Si buffer layer and an SizGe1-z layer on the superlattice structure, then injecting H or He ions into the Si substrate and performing rapid annealing treatment, so as to ensure that the superlattice structure is adsorbed to the ions, and finally obtaining an SizGe1-z layer with low defect concentration and high relaxation. By bonding with the Si substrate with an oxidation layer, SGOI with low defect concentration and high relaxation can be prepared through smart cut, strained silicon with the thickness being smaller than the critical thickness is expanded on the obtained relaxation SizGe1-z layer, and strained silicon (sSOI) with high relaxation and low defect concentration on insulators can be prepared through smart cut. The method improves the stability of relaxation SiGe material prepared through ion injection through superlattice adion, obtains SiGe material with low defect concentration and high relaxation, reduces the technology difficulty, and is applicable to industrial production.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap