Method for controlling fused silicon liquid level position of czochralski silicon mono-crystal furnace

A technology of Czochralski silicon single crystal and liquid level position, which is applied in the fields of single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc. Can't work, etc.

Inactive Publication Date: 2008-04-30
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG +1
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  • Claims
  • Application Information

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Problems solved by technology

It has the following disadvantages, which greatly limit its use. Disadvantage 1 is that it is expensive; Disadvantage 2 is that the calibration process of the system is too complicated;

Method used

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  • Method for controlling fused silicon liquid level position of czochralski silicon mono-crystal furnace
  • Method for controlling fused silicon liquid level position of czochralski silicon mono-crystal furnace
  • Method for controlling fused silicon liquid level position of czochralski silicon mono-crystal furnace

Examples

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Embodiment

[0044] Example 1. On the KAYEX CG6000 single crystal furnace, use a 16-inch thermal field, charge 50KG, and tell the computer a D 0 The value is 10mm. Using the automatic data calculation function of the computer workstation, the measured value of the actual D is 9.6-10.48mm.

[0045] Example 2. On the KAYEX MCZ150 single crystal furnace, use a 24-inch thermal field, charge 150KG, and tell the computer a D 0 The value is 20 mm. Using the automatic data calculation function of the computer workstation, the measured value of the actual D is 19.52-20.41 mm. The lifting speed of the crucible works just as required, if the actual value of D is greater than 20 mm, then the computer will automatically increase the rising speed of the crucible (14), so that the value of D is reduced to about 20 mm; on the contrary, if the actual value of D is less than 20 mm , then the computer will automatically reduce the rising speed of the crucible (14), making the D value increase to about 20 mm...

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Abstract

The invention relates to a molten silicon liquid level position control method of a CZ-Si single crystal furnace. The invention comprises the following steps: heat shield inverted image data is obtained; the data is processed to obtain D; D is compared with D0, D-D0 difference value is inputted into an analog / digital converter to be an electric signal for controlling the speed raising of a vortex increasing motor, to increase or decrease the speed of the vortex increasing motor; a feed back circuit integrates the increase speed increment, and a practical D value is obtained; a computer calculates a D-D0 difference value, if the D-D0 difference value is 0, the proportion of the rising speed of the vortex increasing motor and the crystal increasing speed is not changed; or else, the proportion is increased or decreased (according to the plus minus of the D-D0 difference value). The method has the advantages that the operation is convenient, the precision is high, if the method is used, the variety of the defaults in a CZ-Si single crystal and the distribution of the CZ-Si single crystal can be controlled.

Description

technical field [0001] The present invention relates to the preparation method of semiconductor grade silicon single crystal of manufacturing integrated circuit and other electronic components, especially a kind of control method of the melting silicon liquid level position of Czochralski silicon single crystal furnace, and this method is suitable for having heat shield (being called as Control of the liquid level position of the molten silicon in the single crystal furnace of the "diffuser"). Background technique [0002] About 85% of semiconductor silicon single crystals are manufactured by the Czochralski method. The Czochralski (Czochralski) method is used for the growth of silicon crystal rods, which are circular objects with a central axis, a seed end cone and an end cone between which Between them are cylinders of nearly constant diameter. In this method, polycrystalline silicon is put into a quartz crucible, heated and melted, and then the temperature of the molten...

Claims

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Application Information

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IPC IPC(8): C30B15/20
Inventor 戴小林吴志强周旗钢张果虎王学锋
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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