Coupler structure based on BCB bonding technology and production method thereof

Abstract

The invention provides a coupler structure based on BCB bonding technology and a production method thereof. The coupler structure is characterized in that a silicon substrate and a buried oxide layer disposed on the silicon substrate are provided; a silicon waveguide is disposed on the buried oxide layer, and a first cone-shaped coupling structure is connected with one end of the silicon waveguide; a BCB cladding is disposed on the surface of the buried oxide layer, and is used to cover the silicon waveguide and the first cone-shaped coupling structure; an III-V group optical gain structure is disposed on the surface of the BCB cladding, and a second cone-shaped coupling structure is connected with one end of the III-V group optical gain structure; the first cone-shaped coupling structure and the second cone-shaped coupling structure are in a reverse arrangement, and the projected parts on the horizontal plane are superposed with each other. The mixed integration of the III-V group optical gain structure and the silicon waveguide can be realized, and the mode conversion zone can be formed by adopting the reserve arrangement of the first cone-shaped coupling structure and the second cone-shaped coupling structure, and therefore the length of the coupling structure can be greatly shortened, and the coupling efficiency is high; when the thickness of the BCB cladding is changed, the change amplitude is small, and the coupling efficiency is more stable.

Description

technical field [0001] The invention belongs to the field of integrated optoelectronics, and relates to a coupler structure based on a BCB bonding process and a manufacturing method thereof. Background technique [0002] Silicon-based optical interconnect technology aims to use CMOS technology to produce and develop silicon photonic devices, and integrate silicon-based photonic devices and circuits on the same silicon chip. It is an inevitable way to develop large-capacity, high-performance parallel processing computer systems and communication equipment. Combining microelectronics technology and photonics technology to develop photoelectric hybrid integrated circuits. Introducing integrated optical circuits inside integrated circuits and between chips can not only take advantage of the advantages of fast optical interconnection, no interference, high density, and low power consumption, but also make full use of mature microelectronics technology, high-density integration, h...

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a coupler structure based on BCB bonding process and its manufacturing method, which is used to solve the problem of large coupling structure size, difficult control of coupling efficiency, and manufacturing problems in the prior art. Inconvenient question

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