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47 results about "Metalation" patented technology

Metalation (Alt. spelling: Metallation) is a chemical reaction which involves the bonding of a metal atom to what is typically an organic molecule to form a new compound. This reaction usually involves the replacement of a halogen atom in an organic molecule with a metal atom to form an organometallic compound. In the laboratory, metalation is commonly used to activate organic molecules during the formation of C—X bonds (where X is typically Carbon, Oxygen, or Nitrogen), which are necessary for the synthesis of many organic molecules.

Metal micro-nano structure for improving Raman scattering of molecule

InactiveCN101799420AOvercome the disadvantages of low cost and expensive equipmentSolve the key technical problems of low concentration detectionRaman scatteringInternal memoryMicro nano
The invention relates to a metal micro-nano structure for improving Raman scattering of molecule, which comprises the following steps: (1) estimating limitation of internal memory capacity of a computer; (2) determining parameters such as mesh partition, peripheral medium environment conditions and exciting light condition, and primarily determining initial parameters of the metal micro-nano structure; (3) calculating scattering property Qsca of the metal micro-nano structure; (4) calculating plasma resonant frequency gamma LSPR for simulating the metal micro-nano structure and comparing the plasma resonant frequency gamma LSPR with the system exciting light frequency gamma ex, if the plasma resonant frequency is basically equal to the system exciting light frequency, the next step is entered, and if the plasma resonant frequency is not equal to the system exciting light frequency, the parameters of the peripheral medium environment condition of the metal micro-nano structure is changed; (5) calculating Raman reinforcing factor of the metal micro-nano structure; (6) preparing the micro-nano structure through the parameters of the metal micro-nano structure obtained in the step (4); (7) and realizing the metalation of the micro-nano structure. The metal micro-nano structure can maximally strengthen the Raman scattering of the molecule to be tested, can realize the low-concentration detection, and is simple and practical.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

Preparation method for 9,9-diaryl thiophene xanthene-10,10-dioxide

The invention discloses a preparation method for 9,9-diaryl thiophene xanthene-10,10-dioxide, and belongs to the field of fine organic synthesis and organic semiconductor material preparation. The preparation method comprises the following steps: using diphenylsulphone as a starting material and tetrahydro furan as a solvent, conducting ortho metalation reaction on diphenylsulphone under the action of n-butyllithium within a temperature range of -78-0 DEG C to obtain a corresponding aryl lithium salt; allowing the aryl lithium salt to react with an added aryl formic ether ester derivative, and performing hydrolysis to obtain a corresponding tertiary alcohol; dissolving the tertiary alcohol and electron-rich aromatic with an acetate or methylene chloride solution, using Lewis acid as a catalyst, and carrying out friedel-crafts reaction to obtain the 9,9-diaryl thiophene xanthene-10,10-dioxide. The preparation method has the advantages that the reactions are easy to control, the operation is simple, the cost is low, the repeatability is good, the productivity is high, and the product quality is high; an organic modular unit and an organic functional semiconductor can be conveniently made; the 9,9-diaryl thiophene xanthene-10,10-dioxide is used in the fields of organic light emitting diodes, organic transistors, organic laser, and organic nonlinear optics, and the like.
Owner:NANJING UNIV OF POSTS & TELECOMM

Method for manufacturing monolithic polysilicon cantilever structure

The invention relates to a method for manufacturing a monolithic polysilicon cantilever structure. In the invention, a processing step of the polysilicon cantilever structure is inserted in a conventional BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) technical process, the deposition and the annealing of polysilicon are finished and an MEMS (Micro-Electro-Mechanical Systems) high-temperature process is prevented from influencing on the metalation process before the metalation process. In the release process of the polysilicon cantilever structure, a special etching solution is adopted, and a negative photoresist is used as a post of the polysilicon cantilever structure so as to effectively avoid the problem of substrate adhesion in the cantilever structure release process by using a wet method. The method provided by the invention solves the technical problems of compatibility between a manufacture process of the polysilicon cantilever structure and a processing process of a BiCMOS circuit, realizes the monolithic integration of the polysilicon cantilever structure and a BiCMOS signal processing circuit, and can be widely applied to the monolithic integration manufacture field of MEMS sensors, such as capacitive accelerometers, gyroscopes, and the like.
Owner:NO 24 RES INST OF CETC

Waveguide micro-strip line converter

The invention provides a waveguide micro-strip line converter which comprises a double-face printing circuit board. Micro-strip lines (1) and a short circuit paster (2) are etched on a pattern on the upper layer of the double-face printing circuit board, a signal window is formed in a metal earth plate (5) arranged on the lower layer of the double-face printing circuit board, T-shaped gaps are formed in the rectangular side of the short circuit paster, the two micro-strip lines symmetrically stretch into a short circuit metal face through the T-shaped gaps in the two sides of the short circuit paster to form two micro-strip line ports, a dielectric substrate (3) with a metal via hole (4) is arranged between the upper layer pattern and the lower layer pattern, the metalation via hole formed between the upper layer pattern and the lower layer pattern of the double face printing circuit surrounds the edge of the signal window to form a ring-shaped gap opening ring, the ring-shaped gap opening ring, and the short circuit paster and an incentive oscillator (7) jointly form a rectangular metal cavity which is formed over a rectangular waveguide (8) and equivalent to a cavity filled with media, so that a load terminal of the rectangular waveguide is formed, and the load terminal and the two micro-strip line ports form the three-port converter. According to the converter, the problem that when an existing double-port waveguide micro-strip line converter forms a micro-strip array antenna, the loss is large is solved.
Owner:10TH RES INST OF CETC

Method for preparing cyclopropyl o-fluobenzyl ketone

The invention relates to a method for preparing cyclopropyl o-fluobenzyl ketone. The method comprises the following steps of: (1) carrying out metalized treatment on o-fluo benzyl halide by using tetrahydrofuran or methyl tetrahydrofuran as a reaction medium to obtain a metal reagent of the o-fluo benzyl halide, wherein the metal is the combination of Zn, or Zn/LiCl; and (2) reacting the obtained metalized reagent of the o-fluo benzyl halide with cyclopropyl formyl chloride to generate cyclopropyl o-fluobenzyl ketone, wherein the reaction also can be carried out in the presence of transition metal ions, and the reagent of the transition metal ions is palladium acetate or palladium chloride or triphenyl phosphine palladium or anhydrous nickel chloride or triphenyl nickel chloride phosphine or ferric trichloride or acetyl acetone iron or copper chloride or cuprous chloride or lithium cuprate tetrachloride. In the metalized method, the tetrahydrofuran or the methyl tetrahydrofuran is used as the reaction medium, thus the method has higher yield and better safety compared with a traditional method; and cyclopropyl formyl chloride which has low price and is easy to obtain is used as a raw material to react with the metalized o-fluo benzyl halide, thus the cost is greatly reduced.
Owner:ZHEJIANG HUABANG MEDICAL & CHEM

Manufacture method of metal micro-nano structure for improving Raman scattering of molecule

InactiveCN101799420BSolve the key technical problems of low concentration detectionRaman scatteringMicro nanoInternal memory
The invention relates to a metal micro-nano structure for improving Raman scattering of molecule, which comprises the following steps: (1) estimating limitation of internal memory capacity of a computer; (2) determining parameters such as mesh partition, peripheral medium environment conditions and exciting light condition, and primarily determining initial parameters of the metal micro-nano structure; (3) calculating scattering property Qsca of the metal micro-nano structure; (4) calculating plasma resonant frequency gamma LSPR for simulating the metal micro-nano structure and comparing the plasma resonant frequency gamma LSPR with the system exciting light frequency gamma ex, if the plasma resonant frequency is basically equal to the system exciting light frequency, the next step is entered, and if the plasma resonant frequency is not equal to the system exciting light frequency, the parameters of the peripheral medium environment condition of the metal micro-nano structure is changed; (5) calculating Raman reinforcing factor of the metal micro-nano structure; (6) preparing the micro-nano structure through the parameters of the metal micro-nano structure obtained in the step (4); (7) and realizing the metalation of the micro-nano structure. The metal micro-nano structure can maximally strengthen the Raman scattering of the molecule to be tested, can realize the low-concentration detection, and is simple and practical.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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