Manufacturing method of monolithic integrated pressure sensor

Abstract

The invention discloses a manufacturing method of a monolithic integrated pressure sensor. Te In the invention, overcomes the problem of processing technology compatibility of a resistance type pressure sensor and an amplification processing circuit is solved, combines the processing technology of the resistance type pressure sensor and the processing technology of the amplification processing circuit are combined, and utilizes a special clamp for protecting an integrated circuit and a piezoresistor on the front surface are utilized, meanwhile, a deep slot is formed below the piezoresistor through corrosion, so that the piezoresistor is successfully manufactured on a movable silicon film, . The invention solvessolving the technical difficult problem of processing technology compatibility of the pressure sensor and the circuit, and realizing realizes the monolithic integration of the pressure sensor and the circuit. The method is suitable for the processing field of miniaturized high-reliability pressure sensors.

Description

technical field [0001] The invention relates to a manufacturing method of a monolithic integrated pressure sensor. It is suitable for the processing field of miniaturized and highly reliable pressure sensors. Background technique [0002] At present, in the semiconductor pressure sensor manufacturing technology, the methods of manufacturing pressure sensors mainly include: [0003] 1. Thin film piezoresistive technology. It grows a layer of pressure-sensitive piezoelectric thin film material on a silicon wafer substrate, photoresistively etches piezoresistive regions, sputters metal leads, photoetches metal leads, and alloys to produce a thin film pressure sensor. It uses a pressure-sensitive piezoelectric film material to detect pressure, thereby forming a piezoelectric film resistive pressure sensor. [0004] 2. Silicon resistive technology. It produces P-type diffused resistors on N-type silicon wafers through oxidation, photolithography, P-type diffusion and other se...

AI Technical Summary

Problems solved by technology

[0007] However, the piezoelectric thin-film resistive pressure sensor made by thin-film piezoresistive technology is difficult to realize monolithic integration with the amplification processing circuit. The main reason is that when the piezoelectric thin-film material deposition and corrosion processing are compatible with IC processing, it is easy to contaminate the IC. process, causing IC leakage

The capacitive pressure sensor made by capacitive technology is difficult to be compatible with IC processing technology due to deep groove corrosion, silicon glass bonding and other bulk silicon technologies, so it is also difficult to achieve monolithic integration with the amplification processing circuit

However, the resistive pressure sensor produced by silicon resistive technology and the amplification processing circuit are monolithically integrated, and there is also the difficulty of how to organically combine the processing technology of the pressure sensor with the processing technology of the amplification circuit. In the actual process, it is difficult Do not affect each other, therefore, it is also difficult to achieve monolithic integration

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