Thin film transistor and active matrix organic light emitting diode component and manufacturing method

Abstract

The application provides a thin film transistor, an active matrix organic light emitting diode assembly and a manufacturing method. A thin film transistor comprising: a substrate; a buffer layer on the substrate; a semiconductor layer on the buffer layer, including a source region, a drain region and a channel region; a first gate insulating layer covering the semiconductor layer; The foot of the second gate insulation layer located on the first gate insulation layer, the width of the foot of the second gate insulation layer is smaller than the width of the first gate insulation layer; the foot of the second gate insulation layer A gate electrode on the upper surface, wherein the portion of the first gate insulating layer on the semiconductor layer has a flat upper surface.

Description

technical field [0001] The present disclosure relates to an active matrix organic light emitting display, and in particular, to a thin film transistor, an active matrix organic light emitting diode (AMOLED) assembly including the thin film transistor, and a method of manufacturing the thin film transistor. Background technique [0002] The thin film transistor (TFT) array component part of an active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode: AMOLED) generally adopts a low temperature polysilicon (LTPS: Low Temperature Poly Silicon) process. The quality of thin film transistors and array components including thin film transistors will also determine the final display quality of AMOLED. [0003] In the process of manufacturing AMOLED_LTPS TFT, see Figure 1-2 , using the photoresist pattern 122 as a mask, etch a part of the gate metal layer and the gate insulating layer to form a gate line (not shown), a gate electrode 120 ′ and, for examp...

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Problems solved by technology

At this time, the underlying insulating layer such as the silicon oxide layer 116' may also be etched, resulting in loss of silicon oxide (such as figure 1 circled part in)

As a result, the dopant implantation profile of the source region S and the drain region D will therefore be different, and thus lead to differences in the electrical properties (such as Ion, Ioff, Vth, mobility, etc.) of the final product

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