Thin film transistor, active matrix organic light emitting diode assembly and manufacturing method

Abstract

The invention provides a thin film transistor, an active matrix organic light emitting diode assembly and a manufacturing method of the thin film transistor and the active matrix organic light emitting diode assembly. The thin film transistor comprises a substrate, a buffering layer, a semiconductor layer, a first gate insulating layer, a second gate insulating layer foot and a gate electrode; wherein the buffering layer is located on the substrate; the semiconductor layer is located on the buffering layer and comprises a source region, a drain region and a channel region; the first gate insulating layer covers the semiconductor layer; the second gate insulating layer foot is located on the first gate insulating layer, and the width of the second gate insulating layer foot is smaller than that of the first gate insulating layer; the gate electrode is located on the second gate insulating layer foot. The part, located on the semiconductor layer, of the first gate insulating layer is provided with a flat upper surface.

Description

technical field [0001] The present disclosure relates to an active matrix organic light emitting display, and in particular, to a thin film transistor, an active matrix organic light emitting diode (AMOLED) assembly including the thin film transistor, and a method of manufacturing the thin film transistor. Background technique [0002] The thin film transistor (TFT) array component part of an active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode: AMOLED) generally adopts a low temperature polysilicon (LTPS: Low Temperature Poly Silicon) process. The quality of thin film transistors and array components including thin film transistors will also determine the final display quality of AMOLED. [0003] In the process of manufacturing AMOLED_LTPS TFT, see Figure 1-2 , using the photoresist pattern 122 as a mask, etch a part of the gate metal layer and the gate insulating layer to form a gate line (not shown), a gate electrode 120 ′ and, for examp...

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Problems solved by technology

At this time, the underlying insulating layer such as the silicon oxide layer 116' may also be etched, resulting in loss of silicon oxide (such as figure 1 circled part in)

As a result, the dopant implantation profile of the source region S and the drain region D will be different, and thus lead to differences in the electrical properties (such as Ion, Ioff, Vth, mobility, etc.) of the final product

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