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Semiconductor device, manufacturing method thereof and electronic equipment comprising semiconductor device

A technology for semiconductors and devices, applied in electronic equipment, vertical semiconductor devices and their manufacturing fields, can solve problems such as the difficulty of shrinking horizontal devices

Pending Publication Date: 2021-09-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to this arrangement, horizontal type devices are not easy to further shrink

Method used

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  • Semiconductor device, manufacturing method thereof and electronic equipment comprising semiconductor device
  • Semiconductor device, manufacturing method thereof and electronic equipment comprising semiconductor device
  • Semiconductor device, manufacturing method thereof and electronic equipment comprising semiconductor device

Examples

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Embodiment Construction

[0016] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0017] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a semiconductor device, a manufacturing method thereof and electronic equipment comprising the semiconductor device. According to an embodiment, a semiconductor device may include: an active region extending substantially in a vertical direction on a substrate; the grid stack is formed around at least part of the periphery of the middle section, in the vertical direction, of the active region, and the active region comprises a channel region opposite to the grid stack, and a first source / drain region and a second source / drain region which are arranged on the two opposite sides, in the vertical direction, of the channel region respectively; the gate stack comprises a gate dielectric layer, a work function adjusting layer and a gate electrode material layer, and the work function adjusting layer is arranged between the gate electrode material layer and the channel region; and the first low-k dielectric layer extends from the first end of the work function adjusting layer to surround a first corner of the end part, close to one side of the channel region, of the gate electrode material layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] In addition, it is desirable to reduce Gate Induced Drain Leakage (GIDL, Gate Induced Drain Leakage) in the device. Contents of the invention [0004] In view of this, an o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/51H01L29/49H01L21/336
CPCH01L29/7853H01L29/512H01L29/49H01L29/66795H01L29/78642H01L29/7827H01L29/66666H01L29/165H01L29/513H01L29/517H01L29/4966H01L21/28088H01L29/4908H01L29/66742H01L29/78618H01L29/78696
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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