Method of forming word wire of semiconductor
A semiconductor and device technology, applied in the field of word lines forming semiconductor devices, can solve problems such as charge loss and lower refresh characteristics of devices
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[0019] The present invention will be described in detail with reference to the drawings.
[0020] Figures 3a to 3d is a layout diagram showing a method of forming word lines according to an embodiment of the present invention. Figures 4a to 4d are along Figures 3a to 3d Sectional view of lines I-I and II-II.
[0021] refer to Figure 3a and 4a The device isolation film 33 defining the I-type active region 32 is formed by performing a shallow trench isolation process in the device isolation region of the p-type semiconductor substrate 31 . The active regions 32 are separated from each other by a predetermined distance in the horizontal direction, and are staggered in the vertical direction.
[0022] refer to Figure 3b and 4b , a sacrificial insulating film (not shown), preferably a nitride film, is formed on the semiconductor substrate 31 . The sacrificial insulating film is selectively etched to form an I-type sacrificial insulating film pattern 35 on a predetermin...
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