Method for preparing diamond film through multiple-doped hot filament chemical vapor deposition
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SHANGHAI JIAO TONG UNIV
- Publication Date
- 2012-07-18
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Abstract
Description
technical field
[0001] The invention relates to a preparation method in the field of thin film technology, in particular to a method for preparing a diamond thin film by multi-component doped hot wire chemical vapor deposition and a reaction gas delivery device. Background technique
[0002] Chemical vapor deposition (referred to as CVD method, Chemical Vapor Deposition) diamond film has various excellent physical and chemical properties, its hardness is extremely high, and the friction coefficient between metal and ceramics is small, it has excellent thermal conductivity and Excellent chemical stability. Intrinsic diamond film is a good insulator, and it is an excellent semiconductor material after doping. In addition, the optical transmittance of diamond film coating is also very good. At present, CVD diamond technology has been practically applied, such as coating molds, cutting tools and wear-resistant devices in the field of tools, electrochemical corrosion-resistant a...