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Process for preparing diamond covering on sintered-carbide tool

A technology of diamond coating and cemented carbide, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., and can solve the problems of low adhesion of diamond coating and complicated preparation process of coating transition layer, etc.

Inactive Publication Date: 2005-06-29
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing a diamond coating on a cemented carbide tool, which not only solves the difficulty of low adhesion of the diamond coating, but also avoids the complicated problem of the preparation process of the coating transition layer

Method used

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  • Process for preparing diamond covering on sintered-carbide tool
  • Process for preparing diamond covering on sintered-carbide tool
  • Process for preparing diamond covering on sintered-carbide tool

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Routine pretreatment of carbide tools to be diamond-coated:

[0020] 1. The ratio is KOH:K 3 [Fe(CN) 6 ]: H 2 O=1:1:10 (mass ratio) alkali solution roughens the surface of the cemented carbide substrate for 20 minutes.

[0021] 2. The ratio is H 2 SO 4 :H 2 o 2 =1:10 (volume ratio) acid solution corrodes the cemented carbide substrate for 2 minutes.

[0022] 3. Ultrasonically or manually grind the surface of the cemented carbide tool for 20 minutes with the alcohol suspension of diamond micropowder.

[0023] 4. Use alcohol solution to ultrasonically clean the surface of the cemented carbide tool for 5 minutes.

[0024] Thereafter, the desired diamond coating is prepared by microwave plasma chemical vapor deposition. During chemical vapor deposition, the raw gas includes H 2 、CH 4 and octamethylcyclotetrasiloxane. The purpose of using octamethylcyclotetrasiloxane as the feed gas for the chemical vapor deposition process is to use it to introduce silicon into ...

Embodiment 2

[0028] Carry out the same pretreatment as in Example 1 to the cemented carbide tool to be applied with diamond coating. Thereafter, the desired diamond coating was prepared using a DC arc plasma chemical vapor deposition method. During chemical vapor deposition, the raw gas includes H 2 、CH 4 and SiH 4 . Here, SiH 4 Plays the role of introducing silicon into the chemical vapor deposition system, H 2 、CH 4 Gas is the main reactive gas necessary to deposit the diamond phase.

[0029] The ratio of the mixed gas was adjusted to a ratio of hydrogen:carbon:silicon of 100:1.5:5, and the pressure was adjusted to 20 kPa. Under the action of plasma, H 2 、CH 4 and SiH 4 will be excited and decomposed, and a silicon-containing diamond coating is deposited on the cemented carbide tool heated to 900°C. At the later stage of the above deposition process, change the reaction gas to consist only of H 2 and CH 4 The reaction gas is formed and the deposition of the diamond coating i...

Embodiment 3

[0031] Carry out the same pretreatment as in Example 1 to the cemented carbide tool to be applied with diamond coating. Thereafter, using the hot wire CVD method, the desired diamond coating is prepared. During chemical vapor deposition, the raw gas includes H 2 、CH 4 and SiH 4 .

[0032] Adjust the ratio of hydrogen: carbon: silicon in the mixed gas, the pressure, and the temperature of the cemented carbide substrate to the range shown in Table 1.

[0033] Table 1 Deposition test parameters of diamond coating

[0034]

[0035] Under the experimental parameters in Table 1, a silicon-containing diamond coating was deposited on a cemented carbide tool. In the above deposition process, after 3 hours after the deposition process was started, the reaction gas was changed to only H 2 and CH 4 The reaction gas is formed to continue the deposition of the diamond coating.

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Abstract

The invention provides a method for preparing a diamond coating on a cemented carbide tool. Using plasma CVD technology, a gas mixture containing hydrogen, carbon and silicon is used as the reaction gas to deposit a diamond coating containing diamond phase and silicon on the cemented carbide tool; among them, silicon is carried out in the CVD process of the diamond coating At the same time, it is deposited into the diamond coating and at the interface between the diamond coating and the cemented carbide tool; the existence and enrichment of silicon at the interface of the diamond coating and the cemented carbide tool make the diamond coating more effective on the cemented carbide tool. Tools form high adhesion. The CVD technology includes: microwave plasma CVD technology, hot wire CVD technology, direct current arc plasma CVD technology. The invention has the advantages of effectively improving the adhesion of the diamond coating and simplifying the preparation process of the coating.

Description

technical field [0001] The invention belongs to the technical field of diamond coatings, and in particular provides a method for preparing a diamond coating on a hard alloy tool, which can be applied to coating a diamond coating with high adhesion on the surface of a hard alloy tool and its Corresponding diamond-coated carbide tools. Background technique [0002] Diamond-coated cemented carbide tools not only have the characteristics of high diamond hardness and low friction coefficient, but also have the characteristics of good toughness, low cost and strong shape adaptability of cemented carbide, so they are widely used in various fields of national economy prospect. However, the problem of low adhesion between diamond coating and cemented carbide tool substrate has always been an important factor restricting its application. This is mainly because, when the diamond coating is deposited on WC-Co cemented carbide tools by chemical vapor deposition (CVD), the binder phase ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/22C23C16/27
Inventor 唐伟忠李成明吕反修陈广超宋建华佟玉梅樊凤玲黑立富刘素田
Owner UNIV OF SCI & TECH BEIJING
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