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Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma

A technology of discharge plasma and hot filament, which is applied in chemical instruments and methods, crystal growth, transportation and packaging, etc., and can solve problems such as inability to extract ions

Inactive Publication Date: 2000-08-02
CVD DIAMOND CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of both of these designs is that they do not allow any ions to be extracted towards the substrate during nucleation and growth.

Method used

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  • Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma
  • Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma
  • Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma

Examples

Experimental program
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Effect test

Embodiment 1

[0044] Nucleation on Example 1 Smooth Mirror Quartz

[0045] Using the apparatus shown in FIG. 3 , by applying a bias voltage of 89V to the filament group 58 and heating it to a temperature of about 2160°C, and applying a bias voltage of 200V to the grid 64, diamond formation can even be achieved on smooth mirror quartz. nuclear. The reactant gas mixture is methane / H 2 mixtures with respective flow rates of 6.5 standard cubic centimeters per minute (sccm) for methane and 300 sccm for hydrogen at a total pressure of 30 Torr. The nucleation process lasted about 10 minutes. However, the bias voltage on the filament set 58 is turned off and the bias voltage applied to the grid electrode 64 is adjusted to 120V to allow diamond growth. A faceted diamond film with good coherent and uniformity is obtained. Under the same growth conditions, but without the nucleation step, only shard-like diamonds of uneven thickness formed on the smooth specular quartz. Later...

Embodiment 2

[0046] Embodiment 2 Diamond Heteroepitaxial Growth on Silicon (see Figure 6)

[0047] Using the method and apparatus of FIG. 3, directionally crystallized diamond was grown on Si(100) of silicon pre-cleaned with HF solution, with a filament temperature of about 2200° C., a grid bias of 219 V and a filament bias of 130 V, to nucleate. The reactant gas mixture is methane / H 2 mixtures, each with a flow rate of 6 sccm for methane and 300 sccm for hydrogen, and a total pressure of 50 Torr. The nucleation time is about 10 minutes. Then a bias of OV is applied to the filament group to make the diamond grow. During this process, the gate bias is changed to 112V. Figure 6a The diamond (100) cubic crystal is clearly shown with the (100) plane aligned with the Si(100) and the diamond azimuthal plane [110] aligned with the Si[110] azimuthal plane. When diamond grows with a high nucleation density, a coherent film with diamond(100) / / Si(100), and diamond[110] / / Si[...

Embodiment 3

[0048] The rapid deposition of embodiment 3 diamond films

[0049] Utilize the apparatus of Fig. 3, make diamond coating growth 160 hours, reach 2.5mm thick, and 2 " diameter. The pressure of diamond growth is 30 Torr, and the bias voltage that grid electrode is applied is 45V with respect to filament group. Filament power density is about 170W / cm 2 , the plasma power density is 40W / cm 2 . The growth rate was 16 μm / hr. Both Raman and X-ray photoelectron spectroscopy indicated that the sample was pure diamond with no impurities (data not shown).

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Abstract

A method and apparatus for nucleation and growth of diamond by hot-filament DC plasma deposition. The apparatus uses a resistively heated filament array for dissociating hydrogen in the reactant gas. For two sided diamond growth, configurations of substrate-hot filament-grid-hot filament-substrate or substrate-hot filament-hot filament-substrate configuration are used. For the latter configuration, two independent arrays of filaments serve as both hot filament and grid, and AC or DC plasma is maintained between the filament arrays. For this and the other electrode configurations, the grid electrode is positively biased with respect to the hot filaments to maintain a plasma. The plasma potential gradient across the grid and the hot-filament draws ions from the plasma towards the filaments. To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array. During nucleation, the filament adjacent to the substrate holder is biased positively relative to the substrate so that more ions are accelerated towards the substrate, which in turn enhances the flow of growth precursors towards the substrate resulting in a high diamond nucleation density on the substrate without the need for scratching or diamond-seeding pretreatment. This nucleation method simplifies the growth process and provides a convenient and economical means for heteroepitaxial growth of diamond nuclei on single crystal substrates like Si (100).

Description

field of invention [0001] The present invention relates to chemical vapor deposition (CVD) of diamond film, in particular to a method and equipment for nucleation and growth of diamond film by hot filament DC plasma CVD. Background of the invention [0002] Hot filament chemical vapor deposition (HFCVD) has long been widely used by researchers to deposit polycrystalline diamond on various substrates, published by Matusumoto et al. in J. Materials Science 17, 3106 (1998) The technique and typical reactor design for HFCVD of diamond are described in detail in the article entitled "Growth of Diamond Particles from Methane-Hydrogen". Since the technology was disclosed, many researchers have tried to improve the HFCVD technology. This development can be seen in a review by C.E. Spear entitled "Future Diamond-Ceramic Coatings" published in J. Am. Ceram. Soc. 72(2) 171 (1989). Reactors typically consist of a resistively heated filament and a heatable or coole...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/27C30B25/02C30B29/04H01J37/32
CPCC23C16/271C23C16/27C30B25/02H01J37/32018C23C16/02C23C16/277H01J37/32027Y10T428/30C30B29/04C23C16/272C23C16/481C23C16/503
Inventor 孙碧武刘焕明
Owner CVD DIAMOND CORP
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