Single particle layer nano-diamond film and preparation method thereof

A nano-diamond and single-particle technology, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems that do not involve single-particle layer nano-diamond film, etc., and achieve the effect of simple scheme and easy operation

Active Publication Date: 2015-07-08
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current literature does not involve the preparation of single particle layer nano-diamond film

Method used

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  • Single particle layer nano-diamond film and preparation method thereof
  • Single particle layer nano-diamond film and preparation method thereof
  • Single particle layer nano-diamond film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers were ultrasonically cleaned with deionized water and acetone in turn, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The flow ratio to acetone is 200:90, the distance between the hot wire and the substrate silicon wafer is 7mm, the reaction power is 2200W, and the working pressure is 1.63Kpa; no bias is applied during the reaction, and the preparation time is 15 minutes; after the growth , the temperature of the sample is cooled under the condition of no hydrogen gas, and a single particle layer nano-diamond film with a thicknes...

Embodiment 2

[0029] The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. The polished silicon wafers were washed with deionized water and acetone in an ultrasonic machine, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The flow ratio with acetone is 200:90, the distance between the hot wire and the substrate silicon wafer is 7mm, the reaction power is 2000W, and the working pressure is 1.63Kpa; no bias is applied during the reaction process, and the film preparation time is 30 minutes. After the growth, the sample was cooled down without hydrogen.

[0030] Figure 5 For the cross-sectional SEM image of the sample, it c...

Embodiment 3

[0032] The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. The polished silicon wafers were washed with deionized water and acetone in an ultrasonic machine, dried, and used as substrates for the growth of nano-diamond films. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd., model JUHF CVD 001) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The flow ratio with acetone is 200:90, the power is 1700W, the distance between the hot wire and the substrate silicon wafer is 7mm, the working pressure is 1.63Kpa, no bias is applied during the reaction process; the preparation time is 40 minutes; after the growth is over, The sample was cooled down under the condition of not flowing hydrogen.

[0033] Figure 6 From the cross-sectional SEM image of ...

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Abstract

The invention provides a single particle layer nano-diamond film and a preparation method thereof. The preparation method comprises the following steps: polishing a monocrystalline silicon piece by using a diamond, and then cleaning and drying to obtain a monocrystalline silicon substrate; putting the monocrystalline silicon substrate in hot filament chemical vapor deposition equipment; by taking acetone as a carbon source, bringing acetone to a reaction chamber in a hydrogen bubbling manner, wherein the flow rate of hydrogen to acetone is 200: 90, the distance from a hot filament to the monocrystalline silicon substrate is 7mm, the reaction power is 1600-2300W, and the working air pressure is 1.63Kpa, no bias voltage is applied in the reaction process, the film growing time is 10-50 minutes; and after growth, dropping the temperature and cooling under a condition of not introducing hydrogen, thus obtaining the single particle layer nano-diamond film which is 300-700nm thick. The film is relatively strong in Si-V light-emitting property and has a broad application prospect in the field of single-photon sources, quantum information processing, optoelectronic devices, electrochemical electrodes, biomarkers, semiconductor apparatuses, field emission displays and the like.

Description

(1) Technical field [0001] The invention relates to a single particle layer nano-diamond film with Si-V luminescence and a preparation method thereof. (2) Background technology [0002] Nano-diamond films have a composite structure of nano-diamond grains and amorphous carbon grain boundaries, and have important applications in the fields of microelectronics, electrochemistry, optical protective films, and field emission. The microstructure of the surface of the continuous nano-diamond film with a thickness of 3-10 μm is relatively complex, and the particles on the surface accumulate and overlap each other, which reduces the specific surface area of ​​the film and reduces the surface active area, which affects the performance of the film. If a film composed of individual particles can be obtained and the mutual coverage between particles can be reduced, the specific surface area of ​​the film can be increased, thereby improving its photoelectric and electrochemical properties...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27
Inventor 胡晓君仰宗春
Owner ZHEJIANG UNIV OF TECH
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