Method for preparing amorphous silicon carbide ceramic-diamond composite coating

A technology of silicon carbide ceramics and composite coating, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of complex process, increased time cost, and lengthened preparation process, and achieve high quality, Improvement of friction and wear properties and reduction of surface roughness

Active Publication Date: 2015-06-03
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to ensure that the growth of the diamond film has a high nucleation density and deposition quality, it is necessary to turn on the deposition equipment after the deposition of the transition layer to pretreat the tool substra

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  • Method for preparing amorphous silicon carbide ceramic-diamond composite coating
  • Method for preparing amorphous silicon carbide ceramic-diamond composite coating
  • Method for preparing amorphous silicon carbide ceramic-diamond composite coating

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preparation example Construction

[0030] The preparation method of amorphous silicon carbide ceramics-diamond composite coating of the present invention comprises the steps:

[0031] In the first step, the silicon source is placed in a sealed silicon source bubbling bottle 3, and the silicon source bubbling bottle 3 is placed in the thermostat 2, and the silicon source is bubbled and evaporated by carrying hydrogen gas, and the hydrogen gas with the silicon source vapor After fully mixing with the hydrogen in the hydrogen gas path, it enters the vacuum chamber 5, and deposits an amorphous silicon carbide ceramic film on the surface of the hard alloy substrate by cracking the macromolecular organosilane precursor;

[0032] In the second step, the carbon source is placed in the carbon source bubbling bottle 4, the carbon source bubbling bottle is placed in the thermostat 2, the silicon source gas circuit is closed, the carbon source gas circuit is opened, and the carbon source is bubbled by carrying hydrogen gas ...

Embodiment 1

[0034] The substrate is a YG6 cemented carbide flat piece, with an external dimension of 13mm×13mm×3mm. The substrate is soaked in Murakami solution and ultrasonically etched for 15 minutes to roughen the surface of the substrate. The Murakami solution consists of potassium hydroxide (KOH), iron Potassium cyanide (K 3 (Fe(CN) 6 )) and water (H 2 O), its mass proportion is KOH: K 3 (Fe(CN) 6 ):H 2 O=1:1:10. Then the substrate is soaked in Caro mixed acid solution and etched for 1min to remove the bonded cobalt phase on the surface of the substrate, wherein the composition of Caro mixed acid solution is concentrated sulfuric acid (H 2 SO 4 ) and (H 2 o 2 ), and its volume ratio is H 2 SO 4 :H 2 o 2 =1:10. Then immerse the pretreated cemented carbide substrate in deionized water for ultrasonic cleaning and drying, and place it on the rotary lifting table in the vacuum chamber of the chemical vapor deposition device to deposit the amorphous silicon carbide ceramic-dia...

Embodiment 2

[0044] The substrate is a YG6 cemented carbide turning blade with an external dimension of 13mm×13mm×5mm. The substrate is soaked in Murakami solution and ultrasonically corroded for 15 minutes to roughen the surface of the substrate. The components of Murakami solution are potassium hydroxide (KOH), iron Potassium cyanide (K 3 (Fe(CN) 6 )) and water (H 2 O), its mass proportion is KOH: K 3 (Fe(CN) 6 ):H 2 O=1:1:10. Then the substrate is soaked in Caro mixed acid solution and etched for 1min to remove the bonded cobalt phase on the surface of the substrate, wherein the composition of Caro mixed acid solution is concentrated sulfuric acid (H 2 SO 4 ) and (H 2 o 2 ), and its volume ratio is H 2 SO 4 :H 2 o 2 =1:10. Then immerse the pretreated cemented carbide substrate in deionized water for ultrasonic cleaning and drying, and place it on the rotary lifting table in the vacuum chamber of the chemical vapor deposition device to deposit the amorphous silicon carbide c...

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Abstract

The invention discloses a method for preparing an amorphous silicon carbide ceramic-diamond composite coating. The method comprises the steps of cracking macromolecular organic silane serving as a precursor on the surface of a substrate by adopting a macromolecular precursor cracking method to generate an amorphous silicon carbide ceramic film, and then performing in-situ deposition on the micro diamond film by adopting a hot filament chemical vapor deposition method to obtain the amorphous silicon carbide ceramic-diamond composite coating. Compared with the prior art, the amorphous silicon carbide transition layer prepared by adopting the macromolecular precursor cracking method can be used for effectively blocking residual cobalt phase on the surface of a hard alloy matrix after two-step treatment and improving the rough surface of the hard alloy matrix; and the prepared amorphous silicon carbide ceramic-diamond composite coating has excellent adhesion and extremely high abrasion resistance, and is suitable for preparing high-quality diamond coating cutters.

Description

technical field [0001] The invention relates to the technical field of diamond thin films, in particular to a method for preparing an amorphous silicon carbide ceramic-diamond composite coating by chemical vapor deposition. Background technique [0002] Chemical vapor deposition (CVD) diamond films have mechanical, thermal and chemical properties close to those of natural diamond. CVD diamond coating can be deposited on hard alloy tools with complex curved surfaces, and has a wider application space than diamond thick film tools. material ideal tool material. However, due to the catalysis of cobalt, the binder phase metal in cemented carbide, and the residual stress formed in the film due to the difference in thermal expansion coefficient between cemented carbide and diamond, the bonding strength between the diamond film and the cemented carbide substrate is insufficient. This leads to phenomena such as film shedding and tool chipping during processing. This severely limi...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/27
CPCC23C16/271C23C16/325
Inventor 崔雨潇孙方宏张文骅沈彬郭睿张志明郭松寿
Owner SHANGHAI JIAO TONG UNIV
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