Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hot filament and heat evaporation vapor deposition membrane equipment

A vapor deposition and chemical vapor deposition technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of inability to carry out thermal evaporation treatment process at the same time, to avoid air pollution, improve yield, cost reduction effect

Inactive Publication Date: 2009-04-01
MINNAN NORMAL UNIV
View PDF4 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can solve the problem that the hot filament plasma chemical vapor deposition device in the prior art cannot carry out the thermal evaporation treatment process at the same time, and has the advantage of the combined function of hot filament plasma and thermal evaporation treatment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hot filament and heat evaporation vapor deposition membrane equipment
  • Hot filament and heat evaporation vapor deposition membrane equipment
  • Hot filament and heat evaporation vapor deposition membrane equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0062] The specific implementation of each part of the device is as follows:

[0063] The present equipment consists of placing the thermal evaporation device (32) in parallel between the gas diffusion unit (6) (8) (22) and the hot filament (3) (14) (30) in the conventional hot filament plasma equipment, the thermal evaporation device (32) is installed and fixed on several vertical support rods on the base of the vacuum chamber, the connection between the thermal evaporation device (32) and the support rod is fixed with screws, and the thermal evaporation device (32) can move up and down along the vertical support rod to adjust the thermal evaporation device (32) The position on the support rod, the distance from the sample on the substrate can be adjusted. The thermal evaporation device (32) is connected with the outdoor power supply through the terminal on the wall of the vacuum chamber.

[0064] The hot wire source gas activation device (3) (14) (30) is composed of a hot w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a hot filament and thermal evaporation vapor deposition thin film device for material preparation. The device consists of a hot filament chemical vapor deposition activation part for activating a source gas to deposit the material and forms a combination with a thermal evaporation part. A substrate bracket does combined movement relative to the hot filament or the thermal evaporation wire or the hot filament and the thermal evaporation wire.

Description

1. Technical field [0001] The invention relates to a vapor deposition device for preparing thin film materials and its application, in particular to preparing diamond thin films by using the device. The device prepares thin-film materials by deposition of a source gas activated by a hot filament at low pressure, or in combination with a thermally evaporated filament to evaporate the source material. 2. Background technology [0002] Hot filament plasma chemical vapor deposition equipment generally includes a gas supply system (6) (8) (22), an air extraction system (26), a cooling system (27) (11), a vacuum reaction chamber (2) (7) (23) ), substrate holder (4) (10) (25), hot wire source gas activation device (3) (14) (30) and electronic control system (13) (19-21) (29) (34) (35 ) (37), etc. The source gas and the pipeline used for growth and deposition form a gas supply system (6) (8) (22). The air extraction system (26) is composed of a vacuum pump, an air extraction pipe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/27C23C16/448C23C16/52
Inventor 邵庆益
Owner MINNAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products