Purged vacuum chuck with proximity pins

Abstract

A substrate support structure comprising a first surface and a second surface opposite the first surface. The substrate support structure also comprises a plurality of proximity pins projecting to a first height above the first surface, the first height being less than 100 μm. In addition, the substrate support structure further comprises a plurality of purge ports passing from the second surface to the first surface and a plurality of vacuum ports passing from the second surface to the first surface. In one embodiment, the plurality of purge ports are arranged in a first circular pattern, the first circular pattern having a first radial dimension less than the radius of the substrate support, and the plurality of vacuum ports are arranged in a second circular pattern, the second circular pattern having a second radial dimension less than the first radial dimension.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS [0001] This application claims the benefit of U.S. Provisional Application Ser. No. 60 / 639,109, filed Dec. 22, 2004, entitled “Twin Architecture For Processing A Substrate,” which is incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The present invention relates generally to the field of semiconductor processing equipment. More particularly, the present invention relates to a method and apparatus for supporting a substrate inside a semiconductor processing chamber. The method and apparatus can be applied to electrostatic chucks, vacuum chucks, and other applications as well. [0003] Substrate support chucks are widely used to support substrates within semiconductor processing systems. Two examples of particular types of chucks used in semiconductor processing systems include electrostatic chucks (e-chucks) and vacuum chucks. These chucks are used to retain semiconductor wafers, or other workpieces, in a stationary position du...

AI Technical Summary

Benefits of technology

[0010] Many benefits are achieved by way of the present invention over conventional techniques. For example, the present technique reduces the number of particles generated by contact between the backside surface of the substrate and the support plate. Moreover, embodiments of the present invention provide reduced height proximity pins while controlling the pin height to within a desired tolerance. The reduction in proximity pin height increases the thermal transfer rate of energy from the substrate to the plate assembly, thereby decreasing the time the substrate spends transitioning to a final temperature, increasing system throughput. Moreover, in some embodiments, an increase in thermal coupling between the substrate and plate assembly results in improvements in the thermally dependent properties of one or more films present on the surface of the substrate. Merely by way of example, for films in which control of a critical dimension is a function of diffusion and / or chemical reactions, improvements in control of the critical dimension may result from increased thermal coupling.

[0011] Additionally, increased thermal coupling between the substrate and the plate assembly reduces the thermal impact of any chamber non-uniformities. Some embodiments of the present invention increase the thermal uniformity of the thermal transfer between the substrate and the plate assembly. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits will be described in more detail throughout the present specification and more particularly below.

Problems solved by technology

During substrate processing, the chuck material can abrade the material present on the underside of the substrate, resulting in the introduction of particulate contaminants to the process environment.

Consequently, during substrate processing operations, the particles can adhere themselves to the underside of the substrate and be carried to other process chambers or cause defects in the circuitry fabricated upon the substrate.

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