The invention discloses a preparation method of a low-
dislocation high-efficiency GaN substrate for a
laser. The preparation method comprises the following steps: providing a heterogeneous substrate; a layer of
mask is deposited on a heterogeneous substrate, the
mask is further subjected to uniform glue
etching to be patterned, a GaN single-
crystal crystal column is grown on the basis of the patterned
mask in a heteroepitaxial mode through an HVPE method, and the GaN single-
crystal crystal column is subjected to linear
cutting and
polishing to form a product. And the GaN crystal column top layer can be used as the original substrate, and is repeatedly used after being subjected to wet
etching. The method has the advantages that through mask HVPE epitaxial growth, special treatment of homogeneous
epitaxy and wet
etching can be utilized, so that
lattice mismatch does not exist in homogeneous
epitaxy, pits are formed in
dislocation positions through wet etching, the
epitaxy disappears during regrowth, and in addition, along with continuous increasing of the thickness, the thickness of the epitaxy is gradually increased.
Dislocation extending from an original substrate
interface layer can be continuously annihilated and disappeared; the top layer of the GaN crystal column generated in each cycle can be repeatedly used; the
dislocation density is reduced, so that the polarization effect of the blue-
green laser is reduced.