Ytterbium-doped crystal, as well as growing method and application thereof
A crystal and laser crystal technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of difficulty in obtaining large-sized and high-quality crystals, difficulty in meeting the needs of mass production, and limited self-frequency doubling crystals. The effect of high light damage resistance threshold, good crystal optical quality and convenient preparation
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Embodiment 1
[0054] A kind of ytterbium-doped crystal, the molecular formula of the ytterbium-doped crystal is Ca 3-3x Yb 3x RGa 3 Si 2 o 14 , R is Nb ions, and the doping concentration of Yb ions is 5 at.%.
Embodiment 2
[0056] A kind of ytterbium-doped crystal, the molecular formula of the ytterbium-doped crystal is Ca 3-3x Yb 3x RGa 3 Si 2 o 14 , R is Ta ion, and the doping concentration of Yb ion is 5 at.%.
Embodiment 3
[0058] The growth process of the ytterbium-doped crystal described in embodiment 1, the specific steps include:
[0059] (1) Using CaCO 3 , R 2 o 5 , Ga 2 o 3 , SiO 2 and Yb 2 o 3 As raw material, CaCO 3 , R 2 o 5 , Ga 2 o 3 , SiO 2 and Yb 2 o 3 The purity is greater than or equal to 99.99%, according to the molecular formula Ca 3-3x Yb 3x RGa 3 Si 2 o 14 The stoichiometric ratio is used for batching, and R is Nb ion;
[0060] (2) add Ga in the raw material that step (1) obtains 2 o 3 , add 0.35gGa per 100g raw material 2 o 3 ; Can make up for the Ga in the growth process 2 o 3 Volatilization leads to the problem of component segregation.
[0061] (3) adding Ga obtained in step (2) 2 o 3 Grind the final raw materials; prevent them from sticking into lumps when mixing.
[0062] (4) Mixing materials for 24 hours; to ensure the uniformity of raw materials.
[0063] (5) pressing the raw materials obtained in step (4) into blocks;
[0064] (6) Sinter ...
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