Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The method of fabricating a semiconductor structure includes the following steps. An N-type drift layer is formed. An N-type buffer layer is formed on the N-type drift layer, and the N-type buffer layer includes an N-type dopant. A P-type heavily doped layer (P+implantation layer) is formed on the N-type buffer layer, and the P-type heavily doped layer includes a P-type dopant. A laser light source is used to irradiate the N-type buffer layer and the P-type heavily doped layer to activate the N-type dopant and the P-type dopant. Among them, the laser light source includes an infrared light (IR) and a green laser (green laser). The infrared light irradiates the N-type buffer at a scanning speed of greater than 300 mm / s to 600 mm / s. layer and the P-type heavily doped layer, the infrared light includes multiple infrared light pulses, and the pulse time of the infrared light pulse is greater than 30 nanoseconds (ns) to 200 nanoseconds.

Description

technical field [0001] The present invention relates to a semiconductor structure and a manufacturing method thereof, and in particular to a semiconductor structure applied to a power element and a manufacturing method thereof. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a kind of power device, which is composed of a metal oxide semiconductor field effect transistor (MOSFET) and a bipolar transistor with a PNP junction connected in parallel. The insulated gate bicarrier transistor has the advantages of both components, including high input impedance and low conduction voltage drop, which can reduce the power loss of conduction and switching under high current operation, so it is widely used in green energy , electric vehicles and industrial motors and other fields. [0003] However, in an insulated gate bipolar transistor, in order to form a P-N junction on the crystal back, after implanting n-type or p-ty...

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Problems solved by technology

[0003] However, in an insulated gate bipolar transistor, in order to form a P-N junction on the crystal back, after implanting n-type or p-type ions from the crystal back, it must be heated and tempered to activate the implanted ions, but high temperature heating usually causes Damage to the aluminum wires on the front side of the chip

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