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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as chip aluminum wire damage

Active Publication Date: 2015-04-15
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in an insulated gate bipolar transistor, in order to form a P-N junction on the crystal back, after implanting n-type or p-type ions from the crystal back, it must be heated and tempered to activate the implanted ions, but high temperature heating usually causes Damage to the aluminum wires on the front side of the chip

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0038] In the embodiment of the content of the present invention, in the manufacturing method of the semiconductor structure, the dopant of the semiconductor structure is activated by infrared light and green laser with specific pulse time and scanning speed, so that deep and shallow layers with different doping types can be achieved. Activation, and still have a clear P-N junction between the two, which can be applied to various types of components. The following is a detailed description of embodiments of the present invention with reference to the accompanying drawings. The same reference numerals are used in the drawings to designate the same or similar parts. It should be noted that the drawings have been simplified to clearly illustrate the content of the embodiments, and the detailed structures proposed in the embodiments are for illustration purposes only, and are not intended to limit the protection scope of the present invention. Those with ordinary knowledge can mo...

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Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following steps: forming an N drift layer; forming an N buffer layer on the N drift layer, the N buffer layer including an N dopant; forming a P+ implantation layer on the N buffer layer, the P+ implantation layer including a P dopant; and irradiating the N buffer layer and the P+ implantation layer with a laser light source to activate the N dopant and the P dopant. The laser light source includes infrared light (IR) and green laser, the infrared light irradiates the N buffer layer and the P+ implantation layer with a scan speed of 300mm / s to 600mm / s, the infrared light includes a plurality of infrared light pulses, and the pulse time of the infrared light pulses is 30ns to 200ns.

Description

technical field [0001] The present invention relates to a semiconductor structure and a manufacturing method thereof, and in particular to a semiconductor structure applied to a power element and a manufacturing method thereof. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a kind of power device, which is composed of a metal oxide semiconductor field effect transistor (MOSFET) and a bipolar transistor with a PNP junction connected in parallel. The insulated gate bicarrier transistor has the advantages of both components, including high input impedance and low conduction voltage drop, which can reduce the power loss of conduction and switching under high current operation, so it is widely used in green energy , electric vehicles and industrial motors and other fields. [0003] However, in an insulated gate bipolar transistor, in order to form a P-N junction on the crystal back, after implanting n-type or p-ty...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L21/268H01L29/739
CPCH01L21/268H01L29/66325H01L29/739
Inventor 李隆盛李传英
Owner IND TECH RES INST
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