Gallium nitride-based green laser and preparation method thereof

A gallium nitride-based laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve problems such as weak luminous intensity, achieve the effects of reducing optical absorption loss, improving quantum efficiency, and increasing green luminous intensity

Active Publication Date: 2021-06-25
DONGGUAN UNIV OF TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0006] In order to overcome the defect of weak luminous intensity described in the above-mentioned prior art, the present invention provides a gallium nitride-based green laser, which has an InGaN / InGaN quantum well structure with variable temperature and variable growth rate as an effective Source region, and gradient doped u-InGaN+u-GaN+p-GaN+p + - AlGaN composite upper waveguide layer structure, which can effectively reduce the optical absorption loss of the P-type layer of the laser and improve the luminous intensity of green light

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  • Gallium nitride-based green laser and preparation method thereof
  • Gallium nitride-based green laser and preparation method thereof
  • Gallium nitride-based green laser and preparation method thereof

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Embodiment 1

[0073] This embodiment provides a gallium nitride-based green laser, such as figure 1 As shown, it includes gallium nitride single crystal substrate 101, n-GaN layer 102, n-AlGaN / GaN superlattice confinement layer 103, lower waveguide layer 104, active region 105, p Type electron blocking layer 106, upper waveguide layer 107, p-AlGaN / GaN superlattice confinement layer 108, p-GaN contact layer 109.

[0074] The GaN-based green laser is prepared through the following steps:

[0075] S1. First, in the metal organic compound vapor phase epitaxy reaction chamber, in a hydrogen atmosphere, the temperature is raised to 500-700°C, and then ammonia gas is introduced to form a mixed atmosphere of hydrogen and ammonia, and then the temperature is raised to 900-1100°C. The single crystal substrate is subjected to surface activation treatment for 3-15 minutes.

[0076] S2. In a hydrogen atmosphere, at a temperature of 950-1200°C, feed trimethylgallium as the source of Group III, ammonia ...

Embodiment 2

[0106] This embodiment provides a gallium nitride-based green laser, such as figure 1 As shown, it includes gallium nitride single crystal substrate 101, n-GaN layer 102, n-AlGaN / GaN superlattice confinement layer 103, lower waveguide layer 104, active region 105, p Type electron blocking layer 106, upper waveguide layer 107, p-AlGaN / GaN superlattice confinement layer 108, p-GaN contact layer 109.

[0107] The GaN-based green laser is prepared through the following steps:

[0108] S1. First, in the metal organic compound vapor phase epitaxy reaction chamber, in a hydrogen atmosphere, the temperature is raised to 500-700°C, and then ammonia gas is introduced to form a mixed atmosphere of hydrogen and ammonia, and then the temperature is raised to 900-1100°C. The single crystal substrate is subjected to surface activation treatment for 3-15 minutes.

[0109] S2. In a hydrogen atmosphere, at a temperature of 950-1200°C, feed trimethylgallium as the source of Group III, ammonia ...

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Abstract

The invention discloses a gallium nitride-based green laser and a preparation method thereof. The gallium nitride-based green laser comprises a gallium nitride single crystal substrate, an n-GaN layer, an n-AlGaN / GaN superlattice limiting layer, a lower waveguide layer, an active region, a p-type electron blocking layer, an upper waveguide layer, a p-AlGaN / GaN superlattice limiting layer and a p-GaN contact layer which are sequentially stacked from bottom to top, wherein the active region is of a quantum well structure with variable temperature and variable growth rate, and the lower waveguide layer and the upper waveguide layer are gradient doped composite waveguide layers. According to the invention, the InGaN / InGaN quantum well structure with variable temperature and variable growth rate serving as an active region, the gradient doped u-InGaN+u-GaN+p<+>-AlGaN composite upper waveguide layer and the gradient doped n<+>-Aly1Ga<1-y1>N+n-GaN+u-GaN+u-Inx5Ga<1-x5>N composite lower waveguide layer are arranged, so that the optical absorption loss of the P-type layer of the laser is effectively reduced, the quantum efficiency of the laser is improved, and the green light emitting intensity of the gallium nitride-based green light laser is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically, to a gallium nitride-based green laser and a preparation method thereof. Background technique [0002] III-V group nitride semiconductor materials, including gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) and their alloys, III-V group nitrides are after silicon and gallium arsenide The third-generation semiconductor material is an ideal material for making semiconductor lasers from ultraviolet to green light bands. [0003] Gallium nitride-based green lasers have important application value in the fields of laser display, biomedicine, material processing, optical communication, optical storage, instrumentation and detection, and image recording. The most eye-catching application field of gallium nitride-based semiconductor lasers is laser display. Laser display is a display technology with red, green and blue primary color lase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343H01S5/20
CPCH01S5/343H01S5/2018H01S5/2031
Inventor 贾传宇
Owner DONGGUAN UNIV OF TECH
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