Gallium nitride-based near ultraviolet laser with composite waveguide layer

Abstract

A gallium nitride-based near ultraviolet laser with a composite waveguide layer comprises a substrate; an n-type epitaxial layer; an n-type confinement layer; a first n type AlInN waveguide layer; a second n type AlInN waveguide layer; an active region; an AlInN waveguide layer; a p-type electron blocking layer; a p type AlInN waveguide layer; the p-type limiting layer is manufactured on the p-type AlGaN waveguide layer, and the middle of the p-type limiting layer is in a protruding ridge shape; a p-type doped / p-type heavily doped contact layer; and a p-type ohmic electrode and an n-type ohmicelectrode. The AlInN material is adopted to replace an AlGaN material to serve as the waveguide layer of the GaN-based near ultraviolet laser, under the same growth temperature, the AlInN crystal quality is better, the defect density is lower, and optical absorption caused by defects and impurities is reduced. AlInN can obtain a larger refractive index difference more easily by changing components, an optical field is better limited near an active region, and an optical limiting factor of the laser is increased.

Description

Technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a gallium nitride-based near-ultraviolet laser with a composite waveguide layer. Background technique [0002] The theoretical lasing wavelength of GaN-based semiconductor lasers covers a wide range from infrared to ultraviolet, and has a wide range of applications in solid-state lighting, automotive headlights, laser projection and display, biological disinfection and sterilization, and other fields. The wavelengths of commercially available gallium nitride-based lasers include blue, violet, green and part of the near-ultraviolet. Deep-ultraviolet lasers with wavelengths as short as 271.8nm have also achieved electrical injection lasing. [0003] Compared with the visible light band, the main problems faced in the development of gallium nitride-based lasers in the near-ultraviolet band are the decrease in luminescence recombination rate and the increase in optical ab...

AI Technical Summary

Problems solved by technology

However, the increase of the Al composition in the AlGaN quantum barrier layer and in the waveguide layer / confinement layer increases the defect density in the laser structure and affects the device performance

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