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Gallium nitride-based near ultraviolet laser with composite waveguide layer

A gallium nitride-based, composite waveguide technology is applied in the field of gallium nitride-based near-ultraviolet lasers, which can solve problems such as affecting device performance and increasing the defect density of laser structures, achieving low defect density, increasing optical confinement factors, and reducing optical absorption effect

Active Publication Date: 2020-07-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the increase of the Al composition in the AlGaN quantum barrier layer and in the waveguide layer / confinement layer increases the defect density in the laser structure and affects the device performance

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  • Gallium nitride-based near ultraviolet laser with composite waveguide layer

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Embodiment Construction

[0024] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] The invention discloses a gallium nitride-based near-ultraviolet laser with a composite waveguide layer, including:

[0026] A substrate

[0027] An n-type epitaxial layer, which is fabricated on the substrate;

[0028] An n-type confinement layer, which is fabricated on the n-type epitaxial layer;

[0029] A first n-type AlInN waveguide layer, which is fabricated on the n-type confinement layer;

[0030] A second n-type AlInN waveguide layer fabricated on the first n-type AlInN waveguide layer;

[0031] An active region fabricated on the second n-type AlInN waveguide layer;

[0032] An AlInN waveguide layer, which is fabricated on the active area;

[0033] A p-type electron blocking layer, which is fabricated on the AlInN ...

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Abstract

A gallium nitride-based near ultraviolet laser with a composite waveguide layer comprises a substrate; an n-type epitaxial layer; an n-type confinement layer; a first n type AlInN waveguide layer; a second n type AlInN waveguide layer; an active region; an AlInN waveguide layer; a p-type electron blocking layer; a p type AlInN waveguide layer; the p-type limiting layer is manufactured on the p-type AlGaN waveguide layer, and the middle of the p-type limiting layer is in a protruding ridge shape; a p-type doped / p-type heavily doped contact layer; and a p-type ohmic electrode and an n-type ohmicelectrode. The AlInN material is adopted to replace an AlGaN material to serve as the waveguide layer of the GaN-based near ultraviolet laser, under the same growth temperature, the AlInN crystal quality is better, the defect density is lower, and optical absorption caused by defects and impurities is reduced. AlInN can obtain a larger refractive index difference more easily by changing components, an optical field is better limited near an active region, and an optical limiting factor of the laser is increased.

Description

Technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a gallium nitride-based near-ultraviolet laser with a composite waveguide layer. Background technique [0002] The theoretical lasing wavelength of GaN-based semiconductor lasers covers a wide range from infrared to ultraviolet, and has a wide range of applications in solid-state lighting, automotive headlights, laser projection and display, biological disinfection and sterilization, and other fields. The wavelengths of commercially available gallium nitride-based lasers include blue, violet, green and part of the near-ultraviolet. Deep-ultraviolet lasers with wavelengths as short as 271.8nm have also achieved electrical injection lasing. [0003] Compared with the visible light band, the main problems faced in the development of gallium nitride-based lasers in the near-ultraviolet band are the decrease in luminescence recombination rate and the increase in optical ab...

Claims

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Application Information

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IPC IPC(8): H01S5/20H01S5/343
CPCH01S5/20H01S5/343H01S5/34346
Inventor 陈平赵德刚朱建军刘宗顺杨静梁锋
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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