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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor working performance of semiconductor devices, and achieve the effect of good crystal quality

Active Publication Date: 2021-08-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when the above-mentioned semiconductor device is manufactured by using the existing manufacturing method, there will be more defects in the channel of the fin field effect transistor included in the semiconductor device, resulting in poor working performance of the semiconductor device

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0045] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0046]Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, si...

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Abstract

The invention discloses a manufacturing method of a semiconductor device, relates to the technical field of semiconductors, and is used for reducing defects in channel regions included in fin field effect transistors under the condition of ensuring that the fin field effect transistors formed on different regions have different threshold voltages. The manufacturing method comprises the following steps: providing a substrate; forming a dielectric layer on the substrate, wherein the substrate is provided with various regions; forming a groove in the part of the dielectric layer on each type of region, and forming a semiconductor material layer made of a corresponding material in the groove on each type of region, wherein the semiconductor material layers on different types of regions are threshold regulation and control layers of corresponding types; removing the dielectric layer, and at least etching the semiconductor material layer and the substrate so as to form a fin-shaped structure extending along the first direction on each type of region; and based on each fin-shaped structure, forming a fin field effect transistor on each type of region, so that the fin field effect transistors on different types of regions have different threshold voltages.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the process of manufacturing a semiconductor device including multiple fin field effect transistors, in order to meet actual work requirements, channels with different materials are usually manufactured for different fin field effect transistors, so that the semiconductor device The different FinFETs included have different threshold voltages. [0003] However, when the above-mentioned semiconductor device is manufactured by using the existing manufacturing method, there will be more defects in the channel of the fin field effect transistor included in the semiconductor device, resulting in poor working performance of the semiconductor device. Contents of the invention [0004] The object of the present invention is to provide a manufacturing method of a semiconductor device, which is us...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/66795H01L29/0657H01L29/785
Inventor 李永亮程晓红赵飞马雪丽杨红王晓磊罗军王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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