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Method for preparing InN film material by taking In2O3 as target material

A thin film material and target material technology, which is applied in the field of nitride photoelectric thin film material preparation, can solve the problems of InN thin film XRD diffraction peak intensity, substrate miscellaneous peaks, uneven growth, etc., and achieve microscopic morphology with large particles and crystallization Good quality and uniform effect

Inactive Publication Date: 2017-08-04
NORTHWEST UNIV
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Problems solved by technology

Zhai Luqing and others used the MOCVD method, trimethyl indium as the In source, to prepare InN thin film materials, but the traditional MOCVD method is cumbersome and expensive; Wang Jinying and others used the magnetron sputtering method, the metal indium target as the In source, prepared InN thin film material, the prepared InN thin film XRD diffraction peak intensity is small, the growth is uneven, and there are substrate miscellaneous peaks

Method used

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  • Method for preparing InN film material by taking In2O3 as target material
  • Method for preparing InN film material by taking In2O3 as target material
  • Method for preparing InN film material by taking In2O3 as target material

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Embodiment 1

[0041] This embodiment provides a 2 o 3 The method for preparing the InN thin film material for the target material, the steps are as follows,

[0042] Step 1, place the cut unpolished 1cm×1cm silicon wafer Si(100) substrate in a 100ml beaker, pour a solution of acetone solution and carbon tetrachloride with a volume ratio of 1:1 into the beaker, Until the mixed solution submerges the silicon wafer, in order to prevent external environmental pollution during cleaning, seal the beaker with clean dust-free paper; place the beaker in an ultrasonic cleaner, set the cleaning time to 30 minutes, and repeat twice; Wash the silicon wafer with water and ethanol for 30 minutes, repeat twice; wash the silicon wafer with deionized water for 30 minutes, repeat twice to get a clean silicon wafer, and finally place the cleaned silicon wafer in the container Store in glass vials of absolute ethanol for subsequent use.

[0043] Step 2, place the washed silicon wafer Si (100) on the circular...

Embodiment 2

[0055] This embodiment provides a method for preparing a thin film material. The preparation steps are the same as those in Embodiment 1, except that the chamber temperature is 600°C.

[0056] pass Figure 10 According to the XRD analysis, the sample at the sputtering temperature of 600°C is a high-purity InN thin film material, which is passed Figure 11 SEM and Figure 12 The EDS analysis further confirmed that it is a pure InN thin film material, and the average grain size is 650nm, the grain size is uniform, and there are no miscellaneous peaks.

Embodiment 3

[0061] This embodiment provides a method for preparing a thin film material, the preparation steps are the same as in Embodiment 1, the difference is that the sputtering pressure is 1.2Pa

[0062] pass Figure 16 According to the XRD analysis, the sample under the sputtering pressure of 1.2Pa is an InN thin film material, and the diffraction peak of the substrate Si appears. Figure 17 SEM and Figure 18 According to the EDS analysis, the Si element content is relatively high, and the obtained InN thin film material is not very good in crystallinity.

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Abstract

The invention discloses a preparation method for an InN film. The preparation method comprises the following steps of: washing silicon wafer by acetone, carbon tetrachloride, absolute ethyl alcohol and deionized water; and performing magnetron sputtering deposition on the cleaned silicon wafer to obtain the InN film. According to the preparation method disclosed by the invention, an In2O3 target is firstly adopted to grow out a pure InN film material while a sputtering temperature is 600 DEG C and sputtering pressure intensity is 0.6 Pa. Moreover, microstructure particles are gradually increased, crystallization quality is good, purity is high and impurities are not generated.

Description

technical field [0001] The invention belongs to the technical field of preparation of nitride photoelectric thin film materials, and in particular relates to a preparation method for growing an InN thin film material on a substrate Si (100) crystal plane. Background technique [0002] Ⅲ-Ⅴ nitrides are all direct bandgap semiconductor materials, which belong to new semiconductor materials. For example, gallium nitride (GaN) among them has been considered as the representative of the third generation semiconductor, and has been obtained in the field of microelectronics and optoelectronic devices. Wide range of applications. Due to its excellent properties, indium nitride (InN) has attracted widespread attention in recent years, and has become one of the hotspots in the field of semiconductor materials, devices and sensors. Theoretical research shows that InN material has the highest saturation electron drift velocity and electron transit velocity, and the smallest effective e...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0036C23C14/0617C23C14/3407C23C14/35
Inventor 王雪文张繁吴朝科翟春雪张志勇赵武张远
Owner NORTHWEST UNIV
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