Method for preparing InN film material by taking In2O3 as target material

[0040] Example 1

[0041] This embodiment provides an In 2 O 3 The method of preparing InN film material for the target, the steps are as follows,

[0042] Step 1. Place the unpolished Si(100) substrate of 1cm×1cm silicon wafer in a 100ml beaker, and pour it into the beaker with a 1:1 volume ratio of acetone solution and carbon tetrachloride. Until the mixed solution floods the silicon wafer, in order to prevent external environmental pollution during cleaning, seal the beaker with clean dust-free paper; put the beaker in an ultrasonic cleaner, set the cleaning time to 30 minutes, repeat twice; Clean the silicon wafer with water and ethanol for 30 minutes, repeat twice; clean the silicon wafer with deionized water for 30 minutes, repeat twice to get a clean silicon wafer, and finally place the cleaned silicon wafer in the package. In a glass bottle of absolute ethanol for subsequent use.

[0043] Step 2: Place the washed silicon wafer Si(100) on the circular tray, then place the circular tray on the sample rack, send the circular tray into the reaction chamber by a magnetic manipulator, and then lift it up Vacuum until the vacuum gauge shows 10 -4 Pa order of magnitude.

[0044] Adjust the chamber temperature to 500℃, adjust the sputtering pressure 0.6Pa, adjust the turntable of the rotating table to 2r/min, and set the gas flow rate Ar:N 2 =20:20sccm, bias voltage 50V, radio frequency power 80W, sputtering for 30min.

[0045] After sputtering, turn off the heating system, turntable, and gas, and wait until the temperature of the reaction chamber drops below 200°C or room temperature to prevent the sample from being oxidized, and then take out the sample and store it in a bag.

[0046] by figure 1 XRD analysis shows that the sample at a sputtering temperature of 500℃ is also In 2 O 3 And InN nano-hybrid materials, the content of InN has been increased, through figure 2 SEM and image 3 The sample obtained by the EDS analysis is In 2 O 3 The ratio of InN nano-mixture is about 1.23:1.

[0054] Example 2

[0055] This embodiment provides a method for preparing a thin film material. The preparation steps are the same as those in Embodiment 1, except that the temperature of the chamber is 600°C.

[0056] by Picture 10 According to the XRD analysis, the sample at a sputtering temperature of 600℃ is a high-purity InN thin film material. Picture 11 SEM and Picture 12 The EDS analysis further confirmed that it is a pure InN thin film material with an average crystal grain size of 650nm, uniform crystal grain size, and no impurity peaks.

[0060] Example 3

[0061] This embodiment provides a method for preparing a thin film material. The preparation steps are the same as those in Example 1, except that the sputtering pressure is 1.2 Pa

[0062] by Figure 16 According to the XRD analysis, the sample under the sputtering pressure of 1.2Pa is an InN thin film material, and the diffraction peak of the substrate Si appears. Figure 17 SEM and Figure 18 According to the EDS analysis, the Si element content is relatively high, and the obtained InN film material is not very good in crystallinity.