Method for preparing InN film material by taking In2O3 as target material
A thin film material and target material technology, which is applied in the field of nitride photoelectric thin film material preparation, can solve the problems of InN thin film XRD diffraction peak intensity, substrate miscellaneous peaks, uneven growth, etc., and achieve microscopic morphology with large particles and crystallization Good quality and uniform effect
Inactive Publication Date: 2017-08-04
NORTHWEST UNIV
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Abstract
The invention discloses a preparation method for an InN film. The preparation method comprises the following steps of: washing silicon wafer by acetone, carbon tetrachloride, absolute ethyl alcohol and deionized water; and performing magnetron sputtering deposition on the cleaned silicon wafer to obtain the InN film. According to the preparation method disclosed by the invention, an In2O3 target is firstly adopted to grow out a pure InN film material while a sputtering temperature is 600 DEG C and sputtering pressure intensity is 0.6 Pa. Moreover, microstructure particles are gradually increased, crystallization quality is good, purity is high and impurities are not generated.
Application Domain
Vacuum evaporation coatingSputtering coating +1
Technology Topic
Film materialMicrostructure +8
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PUM
Property | Measurement | Unit |
Average size | 650.0 | nm |
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