Epitaxial wafer for triode and preparation method thereof

A technology of epitaxial wafers and triodes, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as easy breakdown, high dislocation density, high leakage current of triode electronic devices, and achieve high breakdown voltage , good crystal quality and low leakage current

Inactive Publication Date: 2016-03-16
JIANGSU CORENERGY SEMICON CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high dislocation density of the flat sapphire substrate commonly used in the prior ar

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial wafer for triode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Preferred embodiments of the present invention are described in detail below, so that the advantages and features of the present invention can be more easily understood by those skilled in the art.

[0027] figure 1 Shown is an epitaxial wafer for a tertiary tube of the present invention. combine figure 1 As shown, the triode epitaxial wafer includes a substrate 1 , a GaN nucleation layer 2 , a GaN buffer layer 3 , a GaN channel layer 41 , an InAlN intrinsic layer 42 , and a GaN capping layer 43 stacked in sequence.

[0028] The substrate 1 is a patterned sapphire substrate (PSS) 1 . The pattern height, width, and gap of the patterned sapphire substrate 1 are 1.6 μm, 2.4 μm, and 0.6 μm respectively; or, the pattern height, width, and gap of the patterned sapphire substrate 1 are 1.7 μm, 2.6 μm, and 0.4 μm, respectively; Or, the pattern height, width, and gap of the patterned sapphire substrate 1 are 1.2 μm, 1.8 μm, and 0.1 μm, respectively.

[0029] The n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides an epitaxial wafer for a triode and a preparation method thereof. A triode electronic device prepared by the epitaxial wafer has the advantages of low electric leakage, a high breakdown voltage and the long service life. The epitaxial wafer for the triode comprises a substrate, a GaN nucleation layer, a GaN buffer layer, a GaN channel layer and an InAlN intrinsic layer and a GaN cover layer which are successively stacked; and the substrate is a graphical sapphire substrate, the GaN nucleation layer is a C-doped GaN nucleation layer, and the GaN buffer layer is a C-doped GaN buffer layer.

Description

technical field [0001] The invention relates to an epitaxial wafer for a triode and a preparation method thereof, in particular to an epitaxial wafer for a triode using an imaged sapphire substrate and a preparation method thereof. Background technique [0002] There are two main types of substrates currently used for epitaxial wafers of triodes, namely sapphire substrates and silicon carbide substrates. However, due to the high price of silicon carbide, sapphire substrates are more widely used. Due to the high dislocation density of the flat sapphire substrate commonly used in the prior art, the triode electronic device made of it has high leakage current and is easy to break down. Contents of the invention [0003] In view of the above problems, the object of the present invention is to provide an epitaxial wafer for a triode and its preparation method, the triode electronic device made of it has low leakage, high breakdown voltage and long service life. [0004] In or...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/20H01L21/02
CPCH01L29/2003H01L21/0254H01L21/0262
Inventor 王东盛苗操李亦衡魏鸿源严文胜张葶葶朱廷刚
Owner JIANGSU CORENERGY SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap