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SHJ solar cell double-layer TCO film structure and preparation method thereof

A solar cell and thin film structure technology, applied in the field of solar cells, can solve problems such as difficult to break through the performance limit of a single-layer TCO thin film, reduce performance, etc., and achieve the effects of short-circuit current, reduced grain boundary scattering, and good work function matching

Pending Publication Date: 2022-04-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a mutual restrictive relationship between the electrical and optical properties of TCO materials. Conventional control methods will significantly reduce the performance of the other side while improving the electrical or optical properties. From the perspective of the comprehensive optoelectronic properties of TCO materials, existing It is difficult to break through the performance limit of a single-layer TCO film by means of regulation

Method used

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  • SHJ solar cell double-layer TCO film structure and preparation method thereof
  • SHJ solar cell double-layer TCO film structure and preparation method thereof
  • SHJ solar cell double-layer TCO film structure and preparation method thereof

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Effect test

Embodiment 1

[0031] refer to figure 1 , figure 2 , using the radio frequency magnetron sputtering method to deposit a layer of double-layer TCO film 201 with a specific superposition structure on the front of the SHJ solar cell, the specific operation method includes the following steps:

[0032] (1) cleaning and texturizing the n-type monocrystalline silicon wafer to obtain a clean silicon wafer substrate with a pyramid structure on the surface;

[0033] (2) Depositing a layer of intrinsic amorphous silicon film passivation layer respectively on the front and back sides of the silicon wafer;

[0034] (3) Continue depositing one deck of n-type doped amorphous silicon film on the front side of the silicon wafer, and continue depositing one deck of p-type doped amorphous silicon film on the back side;

[0035] (4) Deposit a single-layer TCO film on the back side of the silicon wafer, i.e. on the p-type amorphous silicon film; on the front side of the silicon wafer, i.e. on the n-type amo...

Embodiment 2

[0044] refer to figure 1 , image 3 , using the radio frequency magnetron sputtering method to deposit a layer of double-layer TCO film 202 with a specific superposition structure on the back of the SHJ solar cell, the specific operation method includes the following steps:

[0045] (1) cleaning and texturizing the n-type monocrystalline silicon wafer to obtain a clean silicon wafer substrate with a pyramid structure on the surface;

[0046] (2) Depositing a layer of intrinsic amorphous silicon film passivation layer respectively on the front and back sides of the silicon wafer;

[0047] (3) Continue depositing one deck of n-type doped amorphous silicon film on the front side of the silicon wafer, and continue depositing one deck of p-type doped amorphous silicon film on the back side;

[0048] (4) Deposit a single-layer TCO film on the front side of the silicon wafer, i.e. on the n-type amorphous silicon film; on the back side of the silicon wafer, i.e. on the p-type amorp...

Embodiment 3

[0057] refer to figure 1 , Figure 4 , using the radio frequency magnetron sputtering method to deposit a layer of double-layer TCO thin film 201 / 202 with a specific superimposed structure on both sides of the SHJ solar cell. The specific operation method includes the following steps:

[0058] (1) cleaning and texturizing the n-type monocrystalline silicon wafer to obtain a clean silicon wafer substrate with a pyramid structure on the surface;

[0059] (2) Depositing a layer of intrinsic amorphous silicon film passivation layer respectively on the front and back sides of the silicon wafer;

[0060] (3) Continue depositing one deck of n-type doped amorphous silicon film on the front side of the silicon wafer, and continue depositing one deck of p-type doped amorphous silicon film on the back side;

[0061] (4) Deposit a columnar TCO film with a thickness of 20 nm on both sides of the silicon wafer, and then deposit a layer of equiaxed TCO film with a thickness of 80 nm to fo...

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Abstract

The invention relates to an SHJ solar cell double-layer TCO thin film structure and a preparation method thereof. The SHJ solar cell double-layer TCO thin film structure comprises a columnar TCO layer in contact with an amorphous silicon layer and an equiaxial TCO layer in contact with a metal electrode. According to the SHJ solar cell, the electrical property limitation of a single-layer TCO thin film can be broken through, body longitudinal transmission and surface transverse transmission of carriers are both considered, carrier recombination is reduced, and the conversion efficiency of the SHJ solar cell is improved.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a double-layer TCO film structure of an SHJ solar cell and a preparation method thereof. Background technique [0002] A silicon heterojunction (SHJ) solar cell is a heterojunction solar cell with an intrinsic thin layer, which uses a single crystal silicon (c-Si) sheet as the main body, after cleaning and texturing, the first on the front The hydrogenated amorphous silicon (a-Si:H) layer and transparent conductive oxide film (Transparent Conductive oxide: TCO) were deposited on the light-receiving surface and the second light-receiving surface on the back, respectively, and then screen-printed metal electrodes to obtain a complete SHJ solar cell. Among them, a thin layer of intrinsic hydrogenated amorphous silicon is inserted between the doped hydrogenated amorphous silicon layer and the single crystal silicon substrate, which effectively passivates the c-Si / a-Si interface defects, en...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/072H01L31/20
CPCY02E10/50Y02P70/50
Inventor 孟凡英刘奕阳刘文柱石建华刘正新
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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