GaAs-based InAs quantum dot material growth method

A quantum dot material and growth method technology, applied in the field of GaAs-based InAs quantum dot material growth, can solve the problems of reduced quantum efficiency in InAs quantum dots, high defect density, poor crystal quality of the low-temperature cap layer, etc., and achieve long atom migration time , crystal quality is good, the effect of improving luminous efficiency

Active Publication Date: 2018-11-20
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

[0005] The invention provides a GaAs-based InAs quantum dot material growth method to solve the current problems of poor cryst

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  • GaAs-based InAs quantum dot material growth method
  • GaAs-based InAs quantum dot material growth method

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[0028] In order for those skilled in the art to better understand the technical solutions in the embodiments of the present invention, and to make the above objects, features, and advantages of the embodiments of the present invention more clearly understood, the following describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings. for further details.

[0029] In the description of the present invention, unless otherwise specified and limited, it should be noted that the term "connection" should be understood in a broad sense. It is directly connected or indirectly connected through an intermediate medium. For those skilled in the art, the specific meanings of the above terms can be understood according to specific situations.

[0030] like figure 1 As shown, the present invention provides a method for growing a GaAs-based InAs quantum dot material, characterized in that it includes:

[0031] S1. Grow a GaAs buf...

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Abstract

The invention provides a GaAs-based InAs quantum dot material growth method, which comprises the following steps: S1, growing a GaAs buffer layer on a substrate; S2, growing an InAs quantum dot layerof 2-4ML on the buffer layer, wherein the growth temperature is 470-510 DEG C; S3, turning off the As source; S4, adopting an FME mode on the top of the InAs quantum dot layer to grow a layer of low temperature cap layer with the required thickness, wherein the growing temperature is 470-510 DEG C; S5, adopting a conventional method on the low temperature cap layer to grow a layer of high temperature cap layer with required thickness, wherein the growing temperature is 580-630 DEG C. The GaAs-based InAs quantum dot material growth method in the invention adopts the FME mode; the III-V group atoms alternately grow on the surface of the InAs quantum dot; the crystal quality is good, the atom migration time is long, the mobility is high, the dislocation density is low, the coverage uniformityis good, and the luminous efficiency of the quantum dot is improved.

Description

technical field [0001] The invention belongs to the technical field of controllable growth of low-dimensional semiconductor quantum dot materials and structures, and in particular relates to a GaAs-based InAs quantum dot material growth method. Background technique [0002] Both electrons and holes in self-assembled InAs quantum dots are confined in three dimensions, exhibiting quantized electronic states and high radiative recombination efficiency. InAs quantum dot laser has the advantages of small threshold current and high operating temperature, which can not only inject vitality into the current communication field; the single photon source based on quantum dots not only has high single photon generation efficiency, but also has a fast modulation rate, which is the future of quantum information technology. The development and realization of fast, efficient and safe quantum communication lays the foundation; and the introduction of quantum dots in the high-efficiency batt...

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Application Information

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IPC IPC(8): H01L21/02C23C16/30
CPCC23C16/301H01L21/02395H01L21/02463H01L21/02546H01L21/02601H01L21/0262
Inventor 刘尚军周勇莫才平冯琛张靖杨晓波刘万清
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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