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Light-trapping transparent conductive glass for silicon-based thin film solar cell

A technology of transparent conductive glass and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting the performance of thin films, and achieve the effect of good crystal quality and good conductivity

Inactive Publication Date: 2018-11-06
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] AZO thin film is a kind of transparent conductive film, which exhibits good transparent conductive properties at an appropriate doping concentration, but currently only one kind of doping concentration target is used to prepare the obtained AZO monolayer film, and it needs to be heated to AZO film with better photoelectric performance is prepared, which affects the performance of the film

Method used

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  • Light-trapping transparent conductive glass for silicon-based thin film solar cell
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Experimental program
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Effect test

Embodiment 1

[0017] Such as figure 1 As shown, the present invention provides a light-trapping transparent conductive glass for silicon-based thin-film solar cells, including a glass substrate 1, and the surface of the glass substrate 1 is sequentially laminated with a first AZO film 2, a second AZO film 3, and an Ag film 4. with the third AZO film 5;

[0018] The glass substrate 1 is made of silicate glass with a thickness of 3.2mm, and the glass substrate 1 can be hydroxylated to make it more hydrophilic;

[0019] The thickness of the first AZO film 2 is 100nm, and the Al in the first AZO film 2 2 o 3 The content of is 0.36at%; during the preparation, the AZO target with Al doping concentration of 0.5 wt % is used as the target material, and the first AZO film 2 is sputtered and grown on the surface of the glass substrate 1 by the RF DC-coupled sputtering process; The transmittance of the first AZO film 2 is 90.8%, and the resistivity is 9.9*10 -1 Ω cm magnitude;

[0020] The thickn...

Embodiment 2

[0025] Such as figure 1 As shown, the present invention provides a light-trapping transparent conductive glass for silicon-based thin-film solar cells, including a glass substrate 1, and the surface of the glass substrate 1 is sequentially laminated with a first AZO film 2, a second AZO film 3, and an Ag film 4. with the third AZO film 5;

[0026] The glass substrate 1 is made of silicate glass with a thickness of 3.2mm, and the glass substrate 1 can be hydroxylated to make it more hydrophilic;

[0027] The thickness of the first AZO film 2 is 110nm, and the Al in the first AZO film 2 2 o 3 The content of is 0.96at%; during the preparation, the AZO target with Al doping concentration of 1.0 wt % is used as the target material, and the first AZO film 2 is sputtered and grown on the surface of the glass substrate 1 by the RF DC-coupled sputtering process; The transmittance of the first AZO film 2 is 90.2%, and the resistivity is 8.4*10 -1 Ω cm magnitude;

[0028] The thickn...

Embodiment 3

[0033] Such as figure 1 As shown, the present invention provides a light-trapping transparent conductive glass for silicon-based thin-film solar cells, including a glass substrate 1, and the surface of the glass substrate 1 is sequentially laminated with a first AZO film 2, a second AZO film 3, and an Ag film 4. with the third AZO film 5;

[0034] The glass substrate 1 is made of silicate glass with a thickness of 3.2mm, and the glass substrate 1 can be hydroxylated to make it more hydrophilic;

[0035] The thickness of the first AZO film 2 is 120nm, and the Al in the first AZO film 2 2 o 3 The content of is 1.21at%; during the preparation, the AZO target with Al doping concentration of 1.5 wt % is used as the target material, and the first AZO film 2 is sputtered and grown on the surface of the glass substrate 1 by the RF DC-coupled sputtering process; The transmittance of the first AZO film 2 is 89.7%, and the resistivity is 9.3*10 -1 Ω cm magnitude;

[0036] The thickn...

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Abstract

The invention discloses light-trapping transparent conductive glass for a silicon-based thin film solar cell. The light-trapping transparent conductive glass comprises a glass substrate, wherein a first AZO thin film, a second AZO thin film, an Ag thin film and a third AZO thin film are sequentially laminated on a surface of the glass substrate from bottom to top, the thickness of the first AZO thin film is 100-120 nanometers, the content of Al2O3 in the first AZO thin film accounts for 0.36-1.21at%, the thickness of the second AZO thin film is 100-120 nanometers, the content of Al2O3 in the second AZO thin film accounts for 1.20-2.16at%, the thickness of the Ag thin film is 20 nanometers, the thickness of the third AZO thin film is 400-450 nanometers, and the content of Al2O3 in the thirdAZO thin film accounts for 2.16-3.01at%. The conductive glass is high in transmittance, has relatively high haze and electrical property and simultaneously has a light-trapping function.

Description

technical field [0001] The invention relates to the technical field of glass preparation, in particular to a light-trapping transparent conductive glass for silicon-based thin-film solar cells. Background technique [0002] In recent years, zinc oxide (ZnO)-based transparent conductive films have attracted much attention. Typical applications include flexible electronic products, silicon-based thin-film solar cells, flat panel displays, etc. There are many doping elements to improve the conductivity of ZnO, but aluminum doping is one of the most promising. [0003] AZO thin film is a kind of transparent conductive film, which exhibits good transparent conductive properties at an appropriate doping concentration, but currently only one kind of doping concentration target is used to prepare the obtained AZO monolayer film, and it needs to be heated to The AZO film with better photoelectric performance is prepared, which affects the performance of the film. Contents of the ...

Claims

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Application Information

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IPC IPC(8): H01L31/02H01L31/054C03C17/36
CPCC03C17/3642C03C17/3644H01L31/02008H01L31/054Y02E10/52
Inventor 彭寿姚婷婷杨勇李刚金克武汤永康王天齐彭塞奥沈洪雪甘治平马立云
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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