35results about How to "Increase the number of electrons" patented technology

The invention relates to a polytetratriphenylamine and application thereof as a lithium ion battery positive pole material. The invention discloses a polytetratriphenylamine disclosed as Formula (I) and a preparation method thereof, and application of the polytetratriphenylamine as a lithium ion battery positive pole material. The lithium ion battery prepared by using the polytetratriphenylamine as the positive pole material has favorable charging / discharging voltage platform and cycle performance, and the discharging specific capacity can reach 74.2 mAh / g; and after 50 cycles, the discharging specific capacity is kept at 98% above.

The invention provides a poly[1,4-bis(diphenylamino)benzene], an application thereof and a lithium ion battery prepared therefrom. The structure of the poly[1,4-bis(diphenylamino)benzene] is represented as the formula (I). The poly[1,4-bis(diphenylamino)benzene] is prepared through a step of with ferric trichloride as an oxidizing agent, performing a redox reaction to 1,4-bis(diphenylamino)benzene to prepare the poly[1,4-bis(diphenylamino)benzene] represented as the formula (I). The invention also provides the application of the poly[1,4-bis(diphenylamino)benzene]as an anode material of the lithium ion battery. In the invention, by means of reasonable molecular structure design, the density of free radicals in unit chain of the polymer is increased, so that the discharge capacity is multiplied through fully utilization of a multiple-order charge-discharge principle. In addition, conjugate electric-conductive frameworks of the triphenylamine are maintained, so that the poly[1,4-bis(diphenylamino)benzene], as the anode material, is improved in electronic transmission performance, so that the object of reducing the proportion of non-active electric-conductive carbon in the preparation process of the anode material is achieved. The lithium ion battery is excellent in cyclic stability, has a significant charge-and-discharge voltage platform and is high in charge-and-discharge specific capacity.

The high-efficiency low-voltage external electrode fluorescent lamp (EEFL) for LCD backlight source and illumination comprises: using a slim two-end-opening fluorescent glass tube (2) as main body with fluorescent powder (1) on inner surface and a ceramic tube (5) on inner surface of ends; filling discharge gas (3) in tube (2), setting a couple of metal discharge electrode membranes (4) on outer surface of tube (2) end. Wherein, when manufacturing the lamp, clearing and drying the EEFL, costing fluorescent powder 1 on inner surface, arranging ceramic tube such as alumina ceramic tube 5 on two ends of tube 2; then, sintering and sealing one opening of the tube.

A high-sensitivity and stability composite enzyme functional sensitive film containing Zn-VIA family semiconductor nano-grain, its preparation and use are disclosed. The process is carried out by mixing Zn-VIA family semiconductor nano-sol with oxidizing enzyme solution, adding into polymer gel solution, agitating, adding into glutaric dialdehyde, cross-linking treating, and coating mixed solutiononto solid carrier surface to form into composite enzyme functional sensitive film containing Zn-VIA family semiconductor nano-grain. The proportion of polymer Zn-VIA family semiconductor nano-grainis 1:3.26X10-7-1:8.15X10-1, it contains oxidizing enzyme 0.1-120 active units, the grain size of Zn-VIA family semiconductor is 1-200 nm. It saves enzyme usage and has better performances. It can be used for biological sensor, biological separating film and enzyme biological catalytic engineering.

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of a semiconductor. An epitaxial wafer comprises a sapphire substrate, a buffer layer, a nucleating layer, an un-doped GaN layer, an N-type layer, an active layer and a P-type layer, wherein the buffer layer, the nucleating layer, the un-doped GaN layer, the N-type layer, the active layer and the P-type layer are stacked up on the sapphire substrate in sequence. The epitaxial wafer also comprises an improvement layer. The improvement layer comprises SiN layers and GaN layers, which are stacked up alternately. The improvement layer is arranged between the un-doped GaN layer and the N-type layer, or between the N-type layer and the active layer. The improvement layer is arranged between the un-doped GaN layer and the N-type layer, or between the N-type layer and the active layer, and the improvement layer comprises the SiN layers and the GaN layers, which are stacked up alternately, wherein the SiN layers and the GaN layers, which are stacked up alternately, are in a superlattice structure, so that stress can be released effectively, thereby reducing defects of the active layer, improving crystal quality, improving performance and reliability of the epitaxial wafer, and improving backward voltage of a chip formed by the epitaxial wafer.

The present invention relates to a composite electrode structure and a light-emitting device. The composite electrode structure includes an electrode main body layer and an electrode protection layer for protecting the electrode main body layer. The electrode protection layer and the electrode main body layer are laminated. The main body layer of the electrode contains metal elements of group IIIA, and the electrode protection layer is a metal layer formed of metal elements of group IAIIIA or a metal layer of metal elements of group IIIIII or of metal elements of group IAIIIA and group IIIIII. Various alloy layers formed. The composite electrode structure is applied to the electrodes of light-emitting devices. Since the electrode protection layer itself has a barrier function, it can protect the main body layer of the electrode. Therefore, the luminous efficiency and service life of the light-emitting device can be improved to a certain extent.

The invention discloses a shadow mask type plasma display panel which is characterized by comprising a front panel (1), a rear panel (3) and a shadow mask (2) clamped between the front panel (1) and the rear panel (3), wherein the front panel (1) comprises a front glass substrate (4), a first electrode (5) positioned at the lower surface of the front glass substrate (4), an insulating medium layer (6) covered on the first electrode (5) and a protecting layer (7) covered on the insulating medium layer (6); the shadow mask (2) is provided with holes, and hole walls are coated with fluorescent powder (8); and the rear panel (3) comprises a rear glass substrate (9), a second electrode (10) and an insulating medium layer (11) covered on the second electrode (10). In the shadow mask type plasma display panel, the working voltage and the power consumption are reduced, and the brightness and the luminous efficiency are improved.