Organic semiconductor device by using alkali metal rubidium compound as buffer layer or electron injection layer

A technology of organic semiconductor and electron injection layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of evaporation temperature increase process, unfavorable industrial production, and negative impact on devices, so as to improve injection and transport, balance of electron and hole numbers, effects of increased number of electrons
CN102709475AInactive Publication Date: 2012-10-03JILIN UNIV
3 Cites 8 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JILIN UNIV
Publication Date
2012-10-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to the technical field of a semiconductor device, and particularly relates to an organic semiconductor device by using alkali metal rubidium compound as a buffer layer or an electron injection layer. The alkali metal rubidium compound adopts RbBr, Rb2CO3, Rb2SO4, RbOH, RbNO3, RbClO4, RbCl, RbI, RbF and the like. According to the organic semiconductor device by using the alkali metal rubidium compound as the buffer layer or the electron injection layer, disclosed by the invention, Rb compound is formed into a single cathode buffer layer or is together mixed with an organic material in the organic layer and the cathode of the semiconductor device, thus the electron injection and transmission of the organic semiconductor device can be effectively enhanced, and the performances of the organic semiconductor device can be increased further.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of organic semiconductor devices, and in particular relates to an organic semiconductor device using an alkali metal rubidium compound as a cathode buffer layer material or an electron injection layer doping material. Background technique

[0002] In organic semiconductor devices, because the electron injection barrier between the semiconductor material and the electrode is too large, it is difficult to inject electrons from the electrode into the semiconductor device in the semiconductor device, and the conductivity of the organic electron transport material is relatively low, so it is difficult to combine with Metal electrodes create ohmic contacts, which makes it difficult to improve the performance of organic semiconductor devices.

[0003] Taking Organic Light-Emitting Device (OLED) as an example, OLED has become a popular technology due to its advantages of all solid state, active light emission, high ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More