A kind of epitaxial wafer of light-emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as excessive stress, lattice mismatch, affecting device functions and reliability, etc., achieve good lattice matching, improve Crystal quality, effect of defect reduction

Active Publication Date: 2019-02-12
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] There is a lattice mismatch between GaN and sapphire, which causes excessive stress to cause defects, and the defects extend along the stacking direction of the epitaxial wafer to the active layer, even the P-type GaN layer, affecting the function and reliability of the device

Method used

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  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method

Examples

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Embodiment 1

[0033] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , the epitaxial wafer includes a sapphire substrate 1, and a buffer layer 2, a nucleation layer 3, an undoped GaN layer 4, an improvement layer 10, an N-type layer 5, an active layer 6, a P Type Layer 7.

[0034] In this example, see figure 2 , the improved layer 10 may include alternately stacked SiN layers 10a and GaN layers 10b.

[0035] Optionally, the improved layer may include a first improved sub-layer, a second improved sub-layer, and a third improved sub-layer stacked in sequence, and the first improved sub-layer, the second improved sub-layer, and the third improved sub-layer all include alternately stacked SiN layer and GaN layer, the Si component content in the SiN layer in the first improved sublayer is higher than the Si component content in the SiN layer in the second improved sublayer, and the Si component content in the SiN layer in the second i...

Embodiment 2

[0042] An embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light emitting diode, which is suitable for manufacturing the epitaxial wafer provided in Embodiment 1. When it is realized, trimethylgallium or trimethylethane is used as the gallium source, high-purity NH3 is used as the nitrogen source, trimethylindium is used as the indium source, trimethylaluminum is used as the aluminum source, the N-type dopant is silane, and the P-type dopant is silane. Miscellaneous agent selects dichloromagnesium for use.

[0043] Specifically, see image 3 , the manufacturing method includes:

[0044] Step 201: Provide a sapphire substrate.

[0045]In a specific implementation, the sapphire substrate will be heated to 1060°C in a Metal Organic Chemical Vapor Deposition (English: MetaOrganic Chemical Vapor Deposition, MOCVD) reaction chamber first, and then the sapphire substrate will be annealed in a hydrogen atmosphere. , and finally carry o...

Embodiment 3

[0072] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see Figure 4 , the epitaxial wafer includes a sapphire substrate 1, and a buffer layer 2, a nucleation layer 3, an undoped GaN layer 4, an N-type layer 5, an improvement layer 10, an active layer 6, a P Type Layer 7.

[0073] In this embodiment, the improved layer may be the same as the improved layer provided in Embodiment 1, which will not be described in detail here.

[0074] Specifically, the sapphire substrate may be the same as that provided in Embodiment 1, the buffer layer may be the same as that provided in Embodiment 1, the nucleation layer may be the same as that provided in Embodiment 1, and the undoped GaN The layer can be the same as the undoped GaN layer provided in Embodiment 1, the N-type layer can be the same as the N-type layer provided in Embodiment 1, the active layer can be the same as the active layer provided in Embodiment 1, and the P-type layer can b...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of a semiconductor. An epitaxial wafer comprises a sapphire substrate, a buffer layer, a nucleating layer, an un-doped GaN layer, an N-type layer, an active layer and a P-type layer, wherein the buffer layer, the nucleating layer, the un-doped GaN layer, the N-type layer, the active layer and the P-type layer are stacked up on the sapphire substrate in sequence. The epitaxial wafer also comprises an improvement layer. The improvement layer comprises SiN layers and GaN layers, which are stacked up alternately. The improvement layer is arranged between the un-doped GaN layer and the N-type layer, or between the N-type layer and the active layer. The improvement layer is arranged between the un-doped GaN layer and the N-type layer, or between the N-type layer and the active layer, and the improvement layer comprises the SiN layers and the GaN layers, which are stacked up alternately, wherein the SiN layers and the GaN layers, which are stacked up alternately, are in a superlattice structure, so that stress can be released effectively, thereby reducing defects of the active layer, improving crystal quality, improving performance and reliability of the epitaxial wafer, and improving backward voltage of a chip formed by the epitaxial wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light, and is widely used in technical fields such as indicator lights, display screens, and lighting. [0003] The epitaxial wafer is the raw material for wafer growth inside the LED, and usually includes a sapphire substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, an active layer, and a P-type GaN layer sequentially stacked on the sapphire substrate. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prior art: [0005] There is a lattice mismatch between GaN and sapphire, which causes excessive stress to cause defects. The defects ext...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/00
CPCH01L33/0066H01L33/0075H01L33/04
Inventor 金雅馨万林胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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