Tellurium zincium vestalium thin-film solar cell

Abstract

The invention discloses a CdZnTe thin film solar energy cell comprising: a glass substrate where a transparent conductive oxide front electrode layer, a n type CdS window layer, a p type Cd<1-x>ZnxTe absorption layer, a p type ZnTe:Cu back contact electrode layer are deposited. The advantages of the invention lie in: the p type Cd<1-x>ZnxTe absorption layer is an absorption layer gradually changes with gap that expand the responding wave section of the solar energy cell by gradual changes with gap. When combined with the p type ZnTe:Cu back contact electrode layer, the p type Cd<1-x>ZnxTe absorption layer has a lower work function characteristic, which effectively solves the ohm contact problem to improve photoelectric transformation efficiency and stability of the cell.

Description

technical field [0001] The invention relates to a semiconductor thin film solar cell, in particular to a structural design of a cadmium zinc telluride (CdZnTe) thin film solar cell. Background technique [0002] With the gradual depletion of fossil fuels and the increasingly serious environmental pollution caused by the burning of fossil fuels, solar cells, as a clean and pollution-free energy source, are attracting more and more attention from all countries in the world. A solar cell is a device that uses the photovoltaic effect to directly convert solar energy into electrical energy. So far, many kinds of solar cells have been developed. Including: monocrystalline silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, compound semiconductor solar cells, etc. After years of exploration, people gradually turned their attention to thin-film solar cells. At present, thin-film solar cells mainly include pc-Si thin-film solar cells, CuInGaSe ...

AI Technical Summary

Problems solved by technology

[0004] 1. The addition of dopants in ZnTe increases the mismatch between the lattice of ZnTe and the adjacent CdTe, forming a higher interface state between the two, thereby reducing the performance of solar cells

[0005] 2. Doping atoms in ZnTe or copper atoms in graphite electrodes can diffuse into the p-type cadmium telluride absorber layer quickly, causing the photoelectric performance of the battery to decay

[0006] 3. Because cadmium telluride is a polycrystalline film with a large number of grain boundaries and local micropores, they will form tiny leakage channels, and the zinc telluride transition layer with higher conductivity cannot passivate such defects, so The battery with this structure still has a small shunt resistance

Although this structure can solve its stability problem, it adds a transition layer after all, which increases the complexity of battery production and increases the production cost.

[0008] In addition, the response band range of thin-film solar cells is generally narrow at present. In order to broaden the response band and improve the conversion efficiency of thin-film solar cells, people have designed two P-N junctions in series or three P-N junctions in series. Thin-film solar cells, although this The structure can broaden the response band, but there is also the problem of battery manufacturing complexity

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