The application belongs to the field of
electrical performance detection, and particularly discloses a kind of in-situ measurement method and
system for
electrical performance defects of memory device, which comprises: modulated
electron beam
radiation is radiated on the target position of the surface of the device to be measured, the number of electrons radiated to the target position is in sinusoidal function relationship with time, the SEs
signal of the target position is collected, the actual potential
signal of the target position is collected, the proportional coefficient between the SEs
signal and the actual potential signal is determined, the target position of the device to be measured is equivalent to a circuit in which resistance and
capacitance are connected in parallel, and the resistance R and
capacitance C of the target position are calculated according to the proportional coefficient SEs signal and the current signal of the modulated
electron beam; according to the abnormal values in the resistance R and
capacitance C of
multiple target positions, the position of the
electrical performance defects of the device is determined. The application can improve the defect contrast, better extract defect information, and meet the in-situ measurement of electrical performance of memory device.