The invention belongs to the technical field of
semiconductor devices, and particularly relates to a CoWoS packaging
structure based on a
silicon-based
silicon carbide intermediate layer and a preparation method of the CoWoS packaging structure, the
silicon-based
silicon carbide intermediate layer comprises a
monocrystalline silicon substrate, the two surfaces of the
monocrystalline silicon substrate are polished, a 3C-SiC heat dissipation layer is epitaxially grown on one surface of the
monocrystalline silicon substrate, and silicon through holes are fully distributed in the monocrystalline silicon substrate. According to the CoWoS packaging structure, through the innovative structural design of the double-polished silicon-based 3C-SiC intermediate layer, after 3C-SiC epitaxial growth is completed, device preparation can be directly carried out on the polished back face of the silicon substrate, the preparation method is highly compatible with an existing silicon-based
semiconductor technology, large-size
wafer growth is supported, the technology can be simplified, and the production efficiency is improved. Therefore, the necessary, complex and high-precision bonding link of the
interposer and the device in the traditional scheme is fundamentally omitted, the process flow is shortened, the technical complexity and potential yield loss are reduced, the manufacturing cost is remarkably reduced, and the manufacturing method has the advantages of process compatibility and cost.