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41 results about "Plasmon coupling" patented technology
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Plasmon coupling is a reaction that occurs when two or more plasmonic particles approach each other to a distance below approximately one diameter's length. Upon the occurrence of plasmon coupling, the resonance of individual particles start to hybridize, and their resonance spectra peak wavelength will redshift. The magnitude of the spectra redshift is dependent on the interparticle gap as well as the agglomeration states. A larger redshift is usually associated with smaller interparticle gap and larger cluster size.
Plasmonic engineering of singlet oxygen and/or superoxide generation
ActiveUS20080215122A1Increase triplet yieldIncreased oxygen generationBiocideGroup 8/9/10/18 element organic compoundsEnergy absorptionSuperoxide
The present invention provides for a method to increase the triplet yield of a photosensitizer by the coupling to metal surface plasmons which leads to increased singlet oxygen generation by electric field enhancement or enhanced energy absorption of the photosensitizer. The extent of singlet oxygen enhancement can be tuned for applications in singlet oxygen based clinical therapy by modifying plasmon coupling parameters, such as metallic nanoparticle size and shape, photosensitizer / metallic nanoparticle distance, and the excitation wavelength of the coupling photosensitizer.
Owner:UNIV OF MARYLAND BALTIMORE COUNTY
Light-Emitting Device
The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer.
Owner:NAT TAIWAN UNIV
Process for processing surface plasmon polariton coupled nano array based on scallop effect
ActiveCN104495742AOptimized Design Coupling StructureConvenient researchDecorative surface effectsChemical vapor deposition coatingDiffraction effectNano structuring
The invention discloses a method for preparing a surface plasmon polariton coupled nano array. The method comprises the following steps: performing deep reactive ion etching on a substrate by adopting a nano-scale etching mask which is manufactured by electron beam exposure, and then performing metallic membrane plating to obtain a three-dimensional 'metal nano structure array-nano space layer-metallic film' structure. The metallic nano structure generates local electromagnetic field resonance of photon and free electron to generate a very strong local surface plasmon polariton, and a diffraction effect provides wave vector compensation to excite a propagating type surface plasmon polariton of the metallic film so as to form local surface plasmon polariton-propagating type surface plasmon polariton coupling, so that light is restrained in a nano scale to initiate very strong surface local near field enhancement between a metal and a medium interface. The structure manufactured by the process disclosed by the invention can promote new mechanism exploration of the surface plasmon polariton, and has important application prospects in the fields of metamaterials, ultrahigh-sensitivity optical biosensing and the like.
Owner:PEKING UNIV
Display element, display device, and projection display device
ActiveUS20130057938A1Increase brightnessImprove directivityTelevision system detailsProjectorsExit angleCharge carrier
The present invention includes light valve section (10) having substrate (22) through which light that exits plurality of optical connection mechanisms (23) that switch between the transmitting state and the shading state of light emitted from light emitting element (25) transmits and plasmon coupling section (11) that is arranged in light valve section (10) and that causes plasmon coupling to occur with light that exits light emitting element (25). Plasmon coupling section (11) includes carrier generation layer (15) that generates carriers with light that exits light emitting element (25) and plasmon excitation layer (17) that has a higher plasma frequency than the frequency of light that is generated in carrier generation layer (15) excited with the light emitted from light emitting element (25). Wave number vector conversion layer (19) is arranged on substrate (22). Wave number vector conversion layer (19) converts the light or surface plasmons generated in plasmon excitation layer (17) into light having a predetermined exit angle. Plasmon excitation layer (17) is sandwiched between first dielectric constant layer (16) and second dielectric constant layer (18).
Owner:NEC CORP
Exciton-plasmon coupling system, construction method thereof and method for enhancing photosensitizer singlet oxygen generation by coupling system
ActiveCN106139145AEnhanced SkippingGood treatment effectEnergy modified materialsTransportation and packagingSinglet oxygenLocalized surface plasmon
The invention relates to an exciton-plasmon coupling system, a construction method thereof and a method for enhancing photosensitizer singlet oxygen generation by the coupling system. The exciton-plasmon coupling system is of a core-shell structure formed by adsorbing photosensitizer exciton and plasmon nano-particles, and the LSPR (localized surface plasmon resonance) absorption peak of the plasmon nano-particles covers the exciton absorption peak of photosensitizer in a visible region. The method includes the step of selecting the peak position and the concentration of the plasmon nano-particles, the type and the concentration of electrified substances and the peak position and the concentration of the photosensitizer to form the stable coupling system. The singlet oxygen yield of products is measured by an electron spin resonance technique, the coupling effect as a main factor for enhancing photosensitizer singlet oxygen yield is determined by measuring Raman spectra, and results show that the exciton-plasmon coupling system has higher singlet oxygen yield as compared with an uncoupling system.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Sensitized fiber optic SPR sensor based on graphene oxide and gold nanorods
PendingCN109085141AHigh sensitivityLow detection limitMaterial analysis by optical meansBiocompatibility TestingChemical stability
In order to solve the problem of low sensitivity of existing fiber optic SPR biosensors, the invention provides a sensitized fiber optic SPR sensor based on graphene oxide and gold nanorods. Accordingto the sensitized fiber optic SPR sensor based on the graphene oxide and the gold nanorods, the plasmon coupling effect between a plasma wave on the surface of a gold film and a local surface plasmawave on the surface of the gold nanorods is utilized to enhance the electric field strength. At the same time, the charge transfer between the gold film and the gold nanorods can be promoted by the graphene oxide, so that interactions between a surface plasma wave and a substance to be detected is enhanced, and the detection sensitivity is improved. In addition, the graphene oxide has excellent bio-sensing characteristics, biocompatibility, and a large specific surface area, can better measure biomass and chemical quantities. Compared to an ordinary fiber optic SPR sensor, the sensitized fiberoptic SPR sensor based on the graphene oxide and the gold nanorods has higher sensing sensitivity and chemical stability, real-time monitoring can be performed, the structure of the sensor is compact, thereby being able to widely applied in the fields of physics, chemistry, biology, medical care, food safety and the like.
Owner:NORTHEASTERN UNIV
Efficient GaN-based LED coupled to plasmon and manufacturing method thereof
InactiveCN104218127AAvoid the effects of effective excitationImprove consistencySemiconductor devicesMicro nanoChemical vapor deposition
The invention belongs to the technical field of microelectronics and optoelectronics and relates to an efficient GaN-based LED coupled to a plasmon and a manufacturing method thereof. The efficient GaN-based LED comprises a sapphire substrate, a GaN nucleating layer, a GaN undoped layer, an n-type GaN layer, InGaN / GaN multiple quantum wells, a p-type GaN ohmic contact layer, an Ag photonic crystal layer and a p-type GaN doped layer. Gaps of Ag photonic crystal are filled with p-type GaN. One electrode P and one electrode N are provided. The efficient GaN-based LED is manufactured by a MOCVD (metal organic chemical vapor deposition) technology and a micro-nano machining technology, and luminous efficiency of a device is enhanced by local coupling of SPP (surface plasmon polartions) leak mode and near field of the metal photonic crystal.
Owner:TIANJIN POLYTECHNIC UNIV
A low-RCS antenna
ActiveCN109037947ALow costThe reduction effect is obviousAntenna earthingsAntennas earthing switches associationDispersion curveDielectric substrate
The invention discloses a low-RCS antenna, which comprises an artificial surface plasmon coupling medium and a feeding structure, the feeding structure comprises a monopole antenna and a ground plane,and the monopole antenna is arranged on the ground plane; the artificial surface plasmon coupling medium is arranged on the ground plane; and the artificial surface plasmon coupling medium comprisesa periodic metal cell array and a dielectric substrate, and the periodic metal cell array is arranged on the surface of the dielectric substrate. Thus, the low-RCS antenna provide by the embodiment ofthe present invention adjusts and controls the strong-weak dispersion region in the artificial surface plasmon dispersion curve, so that when the antenna is in the weak dispersion region, electromagnetic waves can be efficiently transmitted and radiated along the coupling medium; and when the antenna is in the strong dispersion region, the electromagnetic waves are strongly absorbed. The antennais simple in structure, adopts a printed circuit board technology to process, and is low in cost and easy to be conformal, and on the premise of ensuring the efficient receiving / transmitting performance, an RCS reduction effect is obvious, and a good RCS reduction effect is achieved even in a relatively large angular domain.
Owner:AIR FORCE UNIV PLA
Metal plasmon coupling luminescence enhancement silicon substrate LED and manufacturing method thereof
InactiveCN103560192AImprove injection efficiencyAvoid the effects of effective excitationSemiconductor devicesLuminous intensityPhotonic crystal structure
The invention belongs to the technical field of micro-electronics and photoelectronics, and relates to a metal plasmon coupling luminescence enhancement silicon substrate LED which is manufactured based on the standard CMOS technique. The metal plasmon coupling luminescence enhancement silicon substrate LED comprises a P electrode, an N electrode and a P+N trap light-emitting junction which is integrated on a P type silicon substrate. The P+ and N+ are of a wedge structure with the tip angle ranging from 75 degrees to 90 degrees, a layer of SiO2 covers the P+N trap light-emitting junction at first, and then a metal Ag photonic crystal structure is manufactured on the surface of the SiO2. The light-emitting efficiency of a device is enhanced through the SPP leakage mode near field local coupling of a metal photonic crystal, the light-emitting strength of the silicon substrate CMOS device is improved, the light-emitting area of the device is centralized, the device has high light power density, and the photoelectricity integration of the device is facilitated.
Owner:TIANJIN POLYTECHNIC UNIV
Display element, display, and projection display device
InactiveCN102893199AIncrease brightnessImprove directionalityTelevision system detailsProjectorsPlasmon excitationPlasmon coupling
Owner:NEC CORP
Display element, display device, and projection display device
ActiveUS20130027675A1Increase brightnessImprove directivityDischarge tube luminescnet screensElectroluminescent light sourcesCharge carrierExit angle
The present invention includes light valve section (10) having a plurality of shutter mechanisms (14) that switch between a transmitting state and a shading state of light emitted from light emitting element (25); and substrate (16) through which light that exits plurality of shutter mechanisms (14) is transmitted. The display element also has plasmon coupling section (11) that causes plasmon coupling to occur with light that exits the light valve section (10). Plasmon coupling section (11) includes carrier generation layer (17) that generates carriers with incident light that exits light valve section (10), plasmon excitation layer (19) that has a higher plasma frequency than the frequency of light that is generated in carrier generation layer (17) excited with the light emitted from light emitting element (25), and wave number vector conversion layer (22) that converts the light or surface plasmons generated in plasmon excitation layer (19) into light having a predetermined exit angle. Plasmon excitation layer (19) is sandwiched between first dielectric constant layer (18) and second dielectric constant layer (22).
Owner:NEC CORP
Surface plasmon enhanced LED optical communication device and manufacturing method thereof
InactiveCN110311023ASimple structureGuaranteed to be smoothNanotechnologySemiconductor devicesModulation bandwidthNanopillar
The invention discloses a surface plasmon enhanced LED optical communication device. An array type nanopillar structure penetrating through a dielectric layer and a p-type GaN layer and stretching into an electron blocking layer is formed on an InGaN epitaxial wafer, nanopillars are filled with metal nanoparticles, or metal films are coated on sidewalls of the nanopillars. The invention further discloses a manufacturing method of the surface plasmon enhanced LED optical communication device. The metal surface plasmon effect is utilized to improve efficiency of an LED light source and enhance modulation bandwidth of optical communication, the nanostructure is prepared by PVD evaporation, high temperature heat treatment, RIE and ICP techniques, the secondary evaporation metal resonance wavelength is matched with the light emitting wavelength of multiple quantum wells, a metal period, the type, the size, the concentration, etc. are corrected in matching with the life spectrum test result,and carriers in a plasmon coupling state are eventually reduced to a picosecond scale. The surface plasmon enhanced LED optical communication device is advantaged in that efficiency of the LED lightsource can be effectively improved, the modulation bandwidth of optical communication is enhanced, the process is relatively simple, cost is low, and reliability is high.
Owner:NANJING UNIV
Metallic device for scanning near-field optical microscopy and spectroscopy and method for manufacturing same
ActiveUS20180120345A1Improve optical efficiencyHigh resolutionScanning probe microscopySpectroscopyEngineering
The present invention relates to a metallic device for near-field optical microscopy and spectroscopy, as well as to a method of preparing it. Said device comprises a single body (1) with longitudinal prolongation (2), nanometric apex (4) and has at least one trimming (3) on its surface, being applied as a probe of high optical efficiency, with adequate dimensions and details that enable the best photon-plasmon coupling, enabling the analysis, with high space resolution, of structures of nanometric dimensions with high efficiency and reproducibility.
Owner:UNIVERSIDADE FEDERAL DE MINAS GERAIS +1
Two-dimensional optical grating-based light absorber and manufacturing method thereof
The invention discloses a two-dimensional optical grating-based light absorber and a manufacturing method thereof. With the two-dimensional optical grating-based light absorber and the manufacturing method thereof of the invention adopted, high-efficiency absorption of external incident light in different frequency bands can be realized. The light absorbing structure comprises a metal mesh layer,a dielectric layer, a metal barrier layer and a substrate which are sequentially distributed from top to bottom; the metal barrier layer satisfies the excitation of a surface plasmons effect by incident light on the surface of the dielectric layer; the incident light radiates at the interface of the metal mesh layer and the dielectric layer so as to form surface plasmons; the two kinds of plasmonswhich are spatially separated from each other are subjected to symmetric plasmon coupling in the dielectric layer. The light absorber of the invention has high efficiency absorption for different visible light bands, and can greatly suppress the sensitivity of light absorption characteristics to the incident angle of the incident light.
Owner:HUBEI UNIV
Surface enhanced raman spectroscopy using shaped gold nanoparticles
InactiveUS20110184202A1Enhanced Raman signalMaterial nanotechnologyMaterial analysis by optical meansSurface-enhanced Raman spectroscopyElectromagnetic field
Surface enhanced Raman scattering (SERS) spectra of 4-mercaptobenzoic acid (4-MBA) self-assembled monolayers (SAMs) on gold substrates is presented for SAMs onto which gold nanoparticles of various shapes have been electrostatically immobilized. SERS spectra of 4-MBA SAMs are enhanced in the presence of immobilized gold nanocrystals by a factor of 107-109 relative to 4-MBA in solution. Large enhancement factors are a likely result of plasmon coupling between the nanoparticles (localized surface plasmon) and the smooth gold substrate (surface plasmon polariton), creating large localized electromagnetic fields at their interface, where 4-MBA molecules reside in this sandwich architecture. Moreover, enhancement factors depend on nanoparticle shape, and vary by a factor of 102.
Owner:UNIVERSITY OF SOUTH CAROLINA
Graphene plasmonic communication link
ActiveUS20140254981A1Avoid electrical connectionNanoopticsElectromagnetic transmission non-optical aspectsPlasmonic couplingCommunication link
A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
Owner:IBM CORP
Graphene plasmonic communication link
InactiveUS9134481B2NanoopticsElectromagnetic transmission non-optical aspectsPlasmonic couplingCommunication link
A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
Owner:INT BUSINESS MASCH CORP
Display element, display device, and projection display device
ActiveUS9110357B2Increase brightnessImprove directivityTelevision system detailsMechanical apparatusPlasmonic couplingExit angle
The present invention includes light valve section (10) having substrate (22) through which light that exits plurality of optical connection mechanisms (23) that switch between the transmitting state and the shading state of light emitted from light emitting element (25) transmits and plasmon coupling section (11) that is arranged in light valve section (10) and that causes plasmon coupling to occur with light that exits light emitting element (25). Plasmon coupling section (11) includes carrier generation layer (15) that generates carriers with light that exits light emitting element (25) and plasmon excitation layer (17) that has a higher plasma frequency than the frequency of light that is generated in carrier generation layer (15) excited with the light emitted from light emitting element (25). Wave number vector conversion layer (19) is arranged on substrate (22). Wave number vector conversion layer (19) converts the light or surface plasmons generated in plasmon excitation layer (17) into light having a predetermined exit angle. Plasmon excitation layer (17) is sandwiched between first dielectric constant layer (16) and second dielectric constant layer (18).
Owner:NEC CORP
Metallic device for scanning near-field optical microscopy and spectroscopy and method for manufacturing same
ActiveUS10274514B2Improve optical efficiencyHigh resolutionScanning probe microscopyHigh spatial resolutionImage resolution
The present invention relates to a metallic device for near-field optical microscopy and spectroscopy, as well as to a method of preparing it. Said device comprises a single body (1) with longitudinal prolongation (2), nanometric apex (4) and has at least one trimming (3) on its surface, being applied as a probe of high optical efficiency, with adequate dimensions and details that enable the best photon-plasmon coupling, enabling the analysis, with high space resolution, of structures of nanometric dimensions with high efficiency and reproducibility.
Owner:UNIVERSIDADE FEDERAL DE MINAS GERAIS +1
Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses
InactiveUS7113474B2Improve recordImprove erase efficiencyRecording by optical meansNanoinformaticsPhase-change memoryPlasmonic coupling
An optical recording medium includes a crystallizing layer for enhancing the crystallization of a phase change memory layer, an energy storage layer for aiding the state transformations of a phase change memory layer, and / or a modifying element for increasing absorption and contrast at short wavelengths. An optical data storage and retrieval system containing same. Also a light-plasmon coupling lens including an optically transparent substrate having a light incident surface and a light-plasmon coupling surface opposite the light incident surface. The light-plasmon coupling surface including at least a set of circular concentric peaks / valleys which form a Fourier sinusoidal pattern in the radial direction of the circular concentric peaks / valleys. A conformal layer of metal is deposited on the light-plasmon coupling surface of the substrate and has aperture at the center of thereof through which plasmons are transmitted.
Owner:OPTICAL MEMORY STORAGE
Display element, display device, and projection display device
ActiveUS9039201B2Increase brightnessImprove directivityMechanical apparatusStatic indicating devicesPlasmonic couplingExit angle
The present invention includes light valve section (10) having a plurality of shutter mechanisms (14) that switch between a transmitting state and a shading state of light emitted from light emitting element (25); and substrate (16) through which light that exits plurality of shutter mechanisms (14) is transmitted. The display element also has plasmon coupling section (11) that causes plasmon coupling to occur with light that exits the light valve section (10). Plasmon coupling section (11) includes carrier generation layer (17) that generates carriers with incident light that exits light valve section (10), plasmon excitation layer (19) that has a higher plasma frequency than the frequency of light that is generated in carrier generation layer (17) excited with the light emitted from light emitting element (25), and wave number vector conversion layer (22) that converts the light or surface plasmons generated in plasmon excitation layer (19) into light having a predetermined exit angle. Plasmon excitation layer (19) is sandwiched between first dielectric constant layer (18) and second dielectric constant layer (22).
Owner:NEC CORP
Optical data storage and systems utilizing plasmon lenses
InactiveUS20060245333A1Improved optical recordingImprove efficiencyRecording by optical meansNanoinformaticsPlasmonic couplingOptical recording
Owner:OPTICAL MEMORY STORAGE
Preparation method of ultraviolet light emitting diode device
ActiveCN103943737BImprove luminous efficiencyPrecise distance controlSemiconductor devicesUltraviolet lightsMetallic materials
The invention provides a preparation method of an ultraviolet light-emitting diode device. The preparation method of the ultraviolet light-emitting diode device is characterized in that a distance between an active region and a metal plasmon is effectively and accurately controlled as the total thickness of an AlGaN electron barrier layer 205 and a p-type AlGaN layer 206 is smaller than the plasmon coupling distance of metal materials of a metal layer of the bottommost layer of an electrode layer, the risk that the active region is damaged in process engineering is eliminated and the luminous efficiency of the ultraviolet light-emitting diode device is improved.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Preparation method of ultraviolet light-emitting diode device
ActiveCN103943737AImprove luminous efficiencyPrecise distance controlSemiconductor devicesMetallic materialsUltraviolet lights
The invention provides a preparation method of an ultraviolet light-emitting diode device. The preparation method of the ultraviolet light-emitting diode device is characterized in that a distance between an active region and a metal plasmon is effectively and accurately controlled as the total thickness of an AlGaN electron barrier layer 205 and a p-type AlGaN layer 206 is smaller than the plasmon coupling distance of metal materials of a metal layer of the bottommost layer of an electrode layer, the risk that the active region is damaged in process engineering is eliminated and the luminous efficiency of the ultraviolet light-emitting diode device is improved.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Au/CuSe tangential heterogeneous nano material and preparation method thereof
ActiveCN110479319AStable shape and structureEnhanced photocatalytic hydrogen production performancePhysical/chemical process catalystsNanotechnologyHexamethylenetetramineCopper selenide
The invention relates to a preparation method of an Au / CuSe tangential heterogeneous nano material, which comprises the following steps of S1, preparing a nanogold colloidal solution under a hexadecyltrimethyl ammonium bromide system, wherein the particle size of gold nanospheres is 18-22nm; S2, preparing a sodium hydrogen selenide solution; adopting a water-phase synthesis method, taking the gold nanospheres as a growth substrate, the sodium hydrogen selenide and the copper acetate as the precursors, the ascorbic acid as a reducing agent and the hexadecyl trimethyl ammonium bromide as a surfactant, carrying out vacuum reaction in the presence of hexamethylenetetramine to grow a two-dimensional copper selenide nanodisk in the tangential direction of the gold nanospheres so as to obtain anAu / CuSe tangential heterogeneous nano-material aqueous solution; and S3, separating, cleaning and drying to obtain the Au / CuSe tangential heterogeneous nano material. The Au / CuSe tangential heterogeneous nano-material is prepared by using an all-aqueous phase method, and the obtained heterogeneous nano-material is stable in morphology and structure, obvious in double-plasmon coupling effect and excellent in photocatalytic hydrogen production performance.
Owner:WUHAN INSTITUTE OF TECHNOLOGY
Plasmonic engineering of singlet oxygen and/or superoxide generation
ActiveUS9339485B2Increase triplet yieldIncreased oxygen generationBiocideGroup 8/9/10/18 element organic compoundsSuperoxideEnergy absorption
Owner:UNIV OF MARYLAND BALTIMORE COUNTY
Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof
ActiveCN111769182AImprove coupling efficiencyReduce the numberSemiconductor devicesMetal particleParticle physics
The invention discloses a surface plasmon GaN-based LED epitaxial structure and a preparation method and application thereof. The surface plasmon GaN-based LED epitaxial structure comprises a substrate, a buffer layer, an n type GaN layer, an InGaN / GaN multi-quantum well active region, a dielectric isolation layer, a metal particle layer, a media capping layer, an electron blocking layer, and a ptype GaN layer. The surface plasmon GaN-based LED epitaxial structure provided by the invention comprises no more than three pairs of quantum wells; due to the fact that the coupling efficiency of theplasmon and the quantum well closest to the plasmon, namely the quantum well closest to the pcan, is the highest, maximum coupling of carriers and plasmon coupling can be achieved by reducing the number of the quantum wells, invalid coupling caused by increase of the quantum wells is reduced, and the radiation recombination rate is greatly increased.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Light emitting diodes
A light emitting device comprises first and second semiconductor layers (14,16) and an emitting layer (18) between the semiconductor layers (14,16), arranged to form a light emitting diode,-a gap (30) in one of the layers; and a metal (34) located in the gap (30) and near enough to the emitting layer (18) to permit surface plasmon coupling between the metal (34) and the emitting layer (18).
Owner:SEREN PHOTONICS
Plasmonic optical waveguide using plasmonic coupling between nano-aperture and nano-particle
The present invention relates to a plasmonic optical waveguide using plasmonic coupling between a nano-aperture and a nano-particle. The plasmonic optical waveguide includes the nano-aperture formed with an opening of a nano-scale through which light enters; and a single metal nano-particle arranged at the focal point of the nano-aperture to generate plasmon coupling in association with the light output from the nano-aperture. The plasmonic optical waveguide has an effect of forming a small and strong high-intensity high-density light spot of a sub-wavelength size, in which an amplification rate is increased at the output surface of the nano-particle more than a few hundred times compared with the incident light, since the light is transmitted by plasmon coupling generated between the nano-aperture and the nano-particle.
Owner:IND ACADEMIC CORP FOUND YONSEI UNIV
Graphene plasmonic communication link
InactiveUS20140255044A1Avoid electrical connectionNanoopticsElectromagnetic transmission non-optical aspectsPlasmonic couplingTelecommunications link
A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
Owner:IBM CORP
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