The invention belongs to the technical field of micro-electronics and photoelectronics, and relates to a metal plasmon coupling luminescence enhancement silicon substrate LED which is manufactured based on the standard CMOS technique. The metal plasmon coupling luminescence enhancement silicon substrate LED comprises a P electrode, an N electrode and a P+N trap light-emitting junction which is integrated on a P type silicon substrate. The P+ and N+ are of a wedge structure with the tip angle ranging from 75 degrees to 90 degrees, a layer of SiO2 covers the P+N trap light-emitting junction at first, and then a metal Ag photonic crystal structure is manufactured on the surface of the SiO2. The light-emitting efficiency of a device is enhanced through the SPP leakage mode near field local coupling of a metal photonic crystal, the light-emitting strength of the silicon substrate CMOS device is improved, the light-emitting area of the device is centralized, the device has high light power density, and the photoelectricity integration of the device is facilitated.