Preparation method of ultraviolet light emitting diode device

Abstract

The invention provides a preparation method of an ultraviolet light-emitting diode device. The preparation method of the ultraviolet light-emitting diode device is characterized in that a distance between an active region and a metal plasmon is effectively and accurately controlled as the total thickness of an AlGaN electron barrier layer 205 and a p-type AlGaN layer 206 is smaller than the plasmon coupling distance of metal materials of a metal layer of the bottommost layer of an electrode layer, the risk that the active region is damaged in process engineering is eliminated and the luminous efficiency of the ultraviolet light-emitting diode device is improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for preparing an ultraviolet light-emitting diode device. Background technique [0002] Ultraviolet light-emitting diode devices have attracted much attention because of their huge potential application value in many fields such as excitation of white light, biochemical detection, sterilization, environmental purification, polymer curing, and short-distance safe communication. Compared with the traditional ultraviolet light source mercury lamp, AlGaN-based ultraviolet light-emitting diode devices have the advantages of long life, low working voltage, adjustable wavelength, environmental protection, good directionality, rapid switching, shock resistance and moisture resistance, light and flexible, etc. With the deepening of research work , will become the mainstream light source for new UV applications in the future. However, due to the difficulty in epita...

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Problems solved by technology

[0004] However, if the pits are prepared using the dry etching process reported in Reference 1, there will be great challenges

First of all, in order to enhance the plasmon coupling effect, it is hoped that the bottom of the pit is close to the active area. On the other hand, if the bottom of the pit is closer to the active area, it is easier to etch the active area during dry etching. Causes damage to the active area, thereby reducing the internal quantum efficiency of the UV light-emitting diode device, and at the same time affecting the reliability of the device and shortening the service life

Since plasma dry etching has a certain damage depth, it is difficult to avoid damage to the active region by this process

Secondly, the etching speed of dry etching is not easy to control, resulting in uneven etching depth on the chip and uneven coupling effect of plasmons, and poor uniformity of light extraction efficiency of on-chip devices.

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